Detail publikačního výsledku

Scanning proximal microscopy study of the thin layers of silicon carbide aluminum nitride solid solution manufactured by fast sublimation epitaxy

DALLAEVA, D.; KOROSTYLEV, E.; BILALOV, B.; TOMÁNEK, P.

Originální název

Scanning proximal microscopy study of the thin layers of silicon carbide aluminum nitride solid solution manufactured by fast sublimation epitaxy

Anglický název

Scanning proximal microscopy study of the thin layers of silicon carbide aluminum nitride solid solution manufactured by fast sublimation epitaxy

Druh

Článek recenzovaný mimo WoS a Scopus

Originální abstrakt

The objective of the study is a growth of SiC/(SiC)1-x(AlN)x structures by fast sublimation epitaxy of the polycrystalline source of (SiC)1-x(AlN)x and their characterisation by proximal scanning electron microscopy and atomic force microscopy. For that purpose optimal conditions of sublimation process have been defined. Manufactured structures could be used as substrates for wide-band-gap semiconductor devices on the basis of nitrides, including gallium nitride, aluminum nitride and their alloys, as well as for the production of transistors with high mobility of electrons and also for creation of blue and ultraviolet light emitters (light-emitted diodes and laser diodes). The result of analysis shows that increasing of the growth temperature up to 2300 K llows carry out sublimation epitaxy of thin layers of aluminum nitride and its solid solution.

Anglický abstrakt

The objective of the study is a growth of SiC/(SiC)1-x(AlN)x structures by fast sublimation epitaxy of the polycrystalline source of (SiC)1-x(AlN)x and their characterisation by proximal scanning electron microscopy and atomic force microscopy. For that purpose optimal conditions of sublimation process have been defined. Manufactured structures could be used as substrates for wide-band-gap semiconductor devices on the basis of nitrides, including gallium nitride, aluminum nitride and their alloys, as well as for the production of transistors with high mobility of electrons and also for creation of blue and ultraviolet light emitters (light-emitted diodes and laser diodes). The result of analysis shows that increasing of the growth temperature up to 2300 K llows carry out sublimation epitaxy of thin layers of aluminum nitride and its solid solution.

Klíčová slova

CdS, AlN, thin layer, proximal microscopy

Klíčová slova v angličtině

CdS, AlN, thin layer, proximal microscopy

Autoři

DALLAEVA, D.; KOROSTYLEV, E.; BILALOV, B.; TOMÁNEK, P.

Rok RIV

2014

Vydáno

03.05.2013

Nakladatel

EDP Sciences

Místo

Les Ullis, France

ISSN

2100-014X

Periodikum

EPJ Web of Conferences

Svazek

48

Číslo

1

Stát

Francouzská republika

Strany od

1

Strany do

4

Strany počet

4

URL

https://www.epj-conferences.org/articles/epjconf/abs/2013/09/epjconf_OAM2012_00002/epjconf_OAM2012_00002.html

Plný text v Digitální knihovně

http://hdl.handle.net/11012/193660

BibTex

@article{BUT99853,
  author="Dinara {Sobola} and Evgenij {Korostylev} and Bilal {Bilalov} and Pavel {Tománek}",
  title="Scanning proximal microscopy study of the thin layers of silicon carbide aluminum nitride solid solution manufactured by fast sublimation epitaxy",
  journal="EPJ Web of Conferences",
  year="2013",
  volume="48",
  number="1",
  pages="1--4",
  doi="10.1051/epjconf/20134800002",
  issn="2100-014X",
  url="https://www.epj-conferences.org/articles/epjconf/abs/2013/09/epjconf_OAM2012_00002/epjconf_OAM2012_00002.html"
}

Dokumenty

epjconf_OAM2012_00002