Publication result detail

Scanning proximal microscopy study of the thin layers of silicon carbide aluminum nitride solid solution manufactured by fast sublimation epitaxy

DALLAEVA, D.; KOROSTYLEV, E.; BILALOV, B.; TOMÁNEK, P.

Original Title

Scanning proximal microscopy study of the thin layers of silicon carbide aluminum nitride solid solution manufactured by fast sublimation epitaxy

English Title

Scanning proximal microscopy study of the thin layers of silicon carbide aluminum nitride solid solution manufactured by fast sublimation epitaxy

Type

Peer-reviewed article not indexed in WoS or Scopus

Original Abstract

The objective of the study is a growth of SiC/(SiC)1-x(AlN)x structures by fast sublimation epitaxy of the polycrystalline source of (SiC)1-x(AlN)x and their characterisation by proximal scanning electron microscopy and atomic force microscopy. For that purpose optimal conditions of sublimation process have been defined. Manufactured structures could be used as substrates for wide-band-gap semiconductor devices on the basis of nitrides, including gallium nitride, aluminum nitride and their alloys, as well as for the production of transistors with high mobility of electrons and also for creation of blue and ultraviolet light emitters (light-emitted diodes and laser diodes). The result of analysis shows that increasing of the growth temperature up to 2300 K llows carry out sublimation epitaxy of thin layers of aluminum nitride and its solid solution.

English abstract

The objective of the study is a growth of SiC/(SiC)1-x(AlN)x structures by fast sublimation epitaxy of the polycrystalline source of (SiC)1-x(AlN)x and their characterisation by proximal scanning electron microscopy and atomic force microscopy. For that purpose optimal conditions of sublimation process have been defined. Manufactured structures could be used as substrates for wide-band-gap semiconductor devices on the basis of nitrides, including gallium nitride, aluminum nitride and their alloys, as well as for the production of transistors with high mobility of electrons and also for creation of blue and ultraviolet light emitters (light-emitted diodes and laser diodes). The result of analysis shows that increasing of the growth temperature up to 2300 K llows carry out sublimation epitaxy of thin layers of aluminum nitride and its solid solution.

Keywords

CdS, AlN, thin layer, proximal microscopy

Key words in English

CdS, AlN, thin layer, proximal microscopy

Authors

DALLAEVA, D.; KOROSTYLEV, E.; BILALOV, B.; TOMÁNEK, P.

RIV year

2014

Released

03.05.2013

Publisher

EDP Sciences

Location

Les Ullis, France

ISBN

2100-014X

Periodical

EPJ Web of Conferences

Volume

48

Number

1

State

French Republic

Pages from

1

Pages to

4

Pages count

4

URL

https://www.epj-conferences.org/articles/epjconf/abs/2013/09/epjconf_OAM2012_00002/epjconf_OAM2012_00002.html

Full text in the Digital Library

http://hdl.handle.net/11012/193660

BibTex

@article{BUT99853,
  author="Dinara {Sobola} and Evgenij {Korostylev} and Bilal {Bilalov} and Pavel {Tománek}",
  title="Scanning proximal microscopy study of the thin layers of silicon carbide aluminum nitride solid solution manufactured by fast sublimation epitaxy",
  journal="EPJ Web of Conferences",
  year="2013",
  volume="48",
  number="1",
  pages="1--4",
  doi="10.1051/epjconf/20134800002",
  issn="2100-014X",
  url="https://www.epj-conferences.org/articles/epjconf/abs/2013/09/epjconf_OAM2012_00002/epjconf_OAM2012_00002.html"
}

Documents

epjconf_OAM2012_00002