Detail publikačního výsledku

Low temperature selective growth of GaN single crystals on pre-patterned Si substrates

MACH, J.; PIASTEK, J.; MANIŠ, J.; ČALKOVSKÝ, V.; ŠAMOŘIL, T.; FLAJŠMANOVÁ, J.; BARTOŠÍK, M.; VOBORNÝ, S.; KONEČNÝ, M.; ŠIKOLA, T.

Originální název

Low temperature selective growth of GaN single crystals on pre-patterned Si substrates

Anglický název

Low temperature selective growth of GaN single crystals on pre-patterned Si substrates

Druh

Článek WoS

Originální abstrakt

We report on a hybrid method for fabrication of arrays of GaN nanocrystals by low-temperature UHV selective growth on pre-patterned silicon substrates covered by native oxide. Patterning of the substrates was performed by using a gallium focused ion beam (FIB). To get GaN nanocrystals at specific positions, Ga droplets were created at FIB patterned sites by evaporation of Ga atoms at 280°C substrate temperature first, and then modified by their post-nitridation using an ultra-low energy (50eV) nitrogen ion–beam at a sample temperature of 200 °C. To get larger arrays of GaN nanocrystals (≈150nm and 200nm in diameter), such a sequential process was repeated in several cycles at slightly modified operation conditions. The quality of the nanocrystals was checked by measurement of their photoluminescence properties which proved the occurrence of the peak of a band edge emission at around 367nm (3.38 eV).

Anglický abstrakt

We report on a hybrid method for fabrication of arrays of GaN nanocrystals by low-temperature UHV selective growth on pre-patterned silicon substrates covered by native oxide. Patterning of the substrates was performed by using a gallium focused ion beam (FIB). To get GaN nanocrystals at specific positions, Ga droplets were created at FIB patterned sites by evaporation of Ga atoms at 280°C substrate temperature first, and then modified by their post-nitridation using an ultra-low energy (50eV) nitrogen ion–beam at a sample temperature of 200 °C. To get larger arrays of GaN nanocrystals (≈150nm and 200nm in diameter), such a sequential process was repeated in several cycles at slightly modified operation conditions. The quality of the nanocrystals was checked by measurement of their photoluminescence properties which proved the occurrence of the peak of a band edge emission at around 367nm (3.38 eV).

Klíčová slova

GaN; Deposition; Selective growth; Low energy ions; Nanocrystals; Photoluminescence

Klíčová slova v angličtině

GaN; Deposition; Selective growth; Low energy ions; Nanocrystals; Photoluminescence

Autoři

MACH, J.; PIASTEK, J.; MANIŠ, J.; ČALKOVSKÝ, V.; ŠAMOŘIL, T.; FLAJŠMANOVÁ, J.; BARTOŠÍK, M.; VOBORNÝ, S.; KONEČNÝ, M.; ŠIKOLA, T.

Rok RIV

2020

Vydáno

14.08.2019

ISSN

0169-4332

Periodikum

APPLIED SURFACE SCIENCE

Svazek

497

Číslo

143705

Stát

Nizozemsko

Strany od

1

Strany do

7

Strany počet

7

URL

https://www.sciencedirect.com/science/article/pii/S0169433219325024

Plný text v Digitální knihovně

http://hdl.handle.net/

BibTex

@article{BUT161424,
  author="Jindřich {Mach} and Jakub {Piastek} and Jaroslav {Maniš} and Vojtěch {Čalkovský} and Tomáš {Šamořil} and Jana {Flajšmanová} and Miroslav {Bartošík} and Stanislav {Voborný} and Martin {Konečný} and Tomáš {Šikola}",
  title="Low temperature selective growth of GaN single crystals on pre-patterned Si substrates",
  journal="APPLIED SURFACE SCIENCE",
  year="2019",
  volume="497",
  number="143705",
  pages="1--7",
  doi="10.1016/j.apsusc.2019.143705",
  issn="0169-4332",
  url="https://www.sciencedirect.com/science/article/pii/S0169433219325024"
}

Dokumenty

Mach - ApplSurfSci