Detail publikačního výsledku

Isolation and optoelectronic characterization of Si solar cells microstructure defects

GAJDOŠ, A.; ŠKARVADA, P.; MACKŮ, R.; PAPEŽ, N.; ŠKVARENINA, Ľ.; SOBOLA, D.

Originální název

Isolation and optoelectronic characterization of Si solar cells microstructure defects

Anglický název

Isolation and optoelectronic characterization of Si solar cells microstructure defects

Druh

Článek Scopus

Originální abstrakt

This research article presents results of silicon solar cell defects optoelectronic characterization based on several experimental methods. These microstructure defects have their origin mainly in the production process, but also can be caused by mechanical stress. However, some defect related spots emit light when the cell is reverse biased. Therefore, electroluminescence (EL) method is used for macroscopic localization and scanning near-field optical microscopy (SNOM) combined with photomultiplier tube in order to scan topography of defective area in microscale. Moreover, elemental analysis of the defects related spots provided by energy-dispersive X-ray spectroscopy (EDX) is presented as well. Besides that, focused ion beam (FIB) was used to isolate the defective spots by 2 µm wide and 2 µm deep barrier. Isolation pattern around the defect is avoiding leakage current flow through it. Since leakage current does not flow through defect, solar cell parameters in reverse conditions are improved.

Anglický abstrakt

This research article presents results of silicon solar cell defects optoelectronic characterization based on several experimental methods. These microstructure defects have their origin mainly in the production process, but also can be caused by mechanical stress. However, some defect related spots emit light when the cell is reverse biased. Therefore, electroluminescence (EL) method is used for macroscopic localization and scanning near-field optical microscopy (SNOM) combined with photomultiplier tube in order to scan topography of defective area in microscale. Moreover, elemental analysis of the defects related spots provided by energy-dispersive X-ray spectroscopy (EDX) is presented as well. Besides that, focused ion beam (FIB) was used to isolate the defective spots by 2 µm wide and 2 µm deep barrier. Isolation pattern around the defect is avoiding leakage current flow through it. Since leakage current does not flow through defect, solar cell parameters in reverse conditions are improved.

Klíčová slova

microstructure defects, silicon, FIB, SEM, SNOM, electroluminiscence, defect isolation, EDX

Klíčová slova v angličtině

microstructure defects, silicon, FIB, SEM, SNOM, electroluminiscence, defect isolation, EDX

Autoři

GAJDOŠ, A.; ŠKARVADA, P.; MACKŮ, R.; PAPEŽ, N.; ŠKVARENINA, Ľ.; SOBOLA, D.

Rok RIV

2019

Vydáno

01.12.2018

Nakladatel

IOP Publishing Ltd

Místo

United Kingdom

ISSN

1742-6596

Periodikum

Journal of Physics: Conference Series

Svazek

1124

Číslo

4

Stát

Spojené království Velké Británie a Severního Irska

Strany od

1

Strany do

6

Strany počet

6

URL

http://iopscience.iop.org/article/10.1088/1742-6596/1124/4/041009

BibTex

@article{BUT152661,
  author="Adam {Gajdoš} and Pavel {Škarvada} and Robert {Macků} and Nikola {Papež} and Ľubomír {Škvarenina} and Dinara {Sobola}",
  title="Isolation and optoelectronic characterization of Si solar cells microstructure defects",
  journal="Journal of Physics: Conference Series",
  year="2018",
  volume="1124",
  number="4",
  pages="1--6",
  doi="10.1088/1742-6596/1124/4/041009",
  issn="1742-6588",
  url="http://iopscience.iop.org/article/10.1088/1742-6596/1124/4/041009"
}