Detail publikačního výsledku

Isolation and optoelectronic characterization of Si solar cells microstructure defects

GAJDOŠ, A.; ŠKARVADA, P.; MACKŮ, R.; PAPEŽ, N.; ŠKVARENINA, Ľ.; SOBOLA, D.

Original Title

Isolation and optoelectronic characterization of Si solar cells microstructure defects

English Title

Isolation and optoelectronic characterization of Si solar cells microstructure defects

Type

Scopus Article

Original Abstract

This research article presents results of silicon solar cell defects optoelectronic characterization based on several experimental methods. These microstructure defects have their origin mainly in the production process, but also can be caused by mechanical stress. However, some defect related spots emit light when the cell is reverse biased. Therefore, electroluminescence (EL) method is used for macroscopic localization and scanning near-field optical microscopy (SNOM) combined with photomultiplier tube in order to scan topography of defective area in microscale. Moreover, elemental analysis of the defects related spots provided by energy-dispersive X-ray spectroscopy (EDX) is presented as well. Besides that, focused ion beam (FIB) was used to isolate the defective spots by 2 µm wide and 2 µm deep barrier. Isolation pattern around the defect is avoiding leakage current flow through it. Since leakage current does not flow through defect, solar cell parameters in reverse conditions are improved.

English abstract

This research article presents results of silicon solar cell defects optoelectronic characterization based on several experimental methods. These microstructure defects have their origin mainly in the production process, but also can be caused by mechanical stress. However, some defect related spots emit light when the cell is reverse biased. Therefore, electroluminescence (EL) method is used for macroscopic localization and scanning near-field optical microscopy (SNOM) combined with photomultiplier tube in order to scan topography of defective area in microscale. Moreover, elemental analysis of the defects related spots provided by energy-dispersive X-ray spectroscopy (EDX) is presented as well. Besides that, focused ion beam (FIB) was used to isolate the defective spots by 2 µm wide and 2 µm deep barrier. Isolation pattern around the defect is avoiding leakage current flow through it. Since leakage current does not flow through defect, solar cell parameters in reverse conditions are improved.

Keywords

microstructure defects, silicon, FIB, SEM, SNOM, electroluminiscence, defect isolation, EDX

Key words in English

microstructure defects, silicon, FIB, SEM, SNOM, electroluminiscence, defect isolation, EDX

Authors

GAJDOŠ, A.; ŠKARVADA, P.; MACKŮ, R.; PAPEŽ, N.; ŠKVARENINA, Ľ.; SOBOLA, D.

RIV year

2019

Released

01.12.2018

Publisher

IOP Publishing Ltd

Location

United Kingdom

ISBN

1742-6596

Periodical

Journal of Physics: Conference Series

Volume

1124

Number

4

State

United Kingdom of Great Britain and Northern Ireland

Pages from

1

Pages to

6

Pages count

6

URL

http://iopscience.iop.org/article/10.1088/1742-6596/1124/4/041009

Full text in the Digital Library

http://hdl.handle.net/

BibTex

@article{BUT152661,
  author="Adam {Gajdoš} and Pavel {Škarvada} and Robert {Macků} and Nikola {Papež} and Ľubomír {Škvarenina} and Dinara {Sobola}",
  title="Isolation and optoelectronic characterization of Si solar cells microstructure defects",
  journal="Journal of Physics: Conference Series",
  year="2018",
  volume="1124",
  number="4",
  pages="1--6",
  doi="10.1088/1742-6596/1124/4/041009",
  issn="1742-6596",
  url="http://iopscience.iop.org/article/10.1088/1742-6596/1124/4/041009"
}