Effect of normal stress on the ideal shear strength in covalent crystals

Effect of normal stress on the ideal shear strength in covalent crystals

Článek WoS

Critical shear stress under the superimposed hydrostatic and uniaxial normal stress conditions of C, Si, Ge, and SiC is evaluated by ab initio density functional theory calculations to investigate the response of ideal shear strength (ISS) to superimposed normal stresses in covalent crystals. We find a substantial difference in the responses of ISS to normal stress among the covalent crystals examined; e.g., hydrostatic compression increases the ISS of C but decreases that of Si, Ge, and SiC. The ISS is mostly a highly nonlinear and anisotropic function of normal stress. The results thus indicate that normal stresses can significantly affect the critical shear stress, which is crucial to interpreting experimental observations of crystal deformation, e.g., dislocation nucleation in nanoindentation.

Critical shear stress under the superimposed hydrostatic and uniaxial normal stress conditions of C, Si, Ge, and SiC is evaluated by ab initio density functional theory calculations to investigate the response of ideal shear strength (ISS) to superimposed normal stresses in covalent crystals. We find a substantial difference in the responses of ISS to normal stress among the covalent crystals examined; e.g., hydrostatic compression increases the ISS of C but decreases that of Si, Ge, and SiC. The ISS is mostly a highly nonlinear and anisotropic function of normal stress. The results thus indicate that normal stresses can significantly affect the critical shear stress, which is crucial to interpreting experimental observations of crystal deformation, e.g., dislocation nucleation in nanoindentation.

shear strength, normal stress, ab initio

shear strength, normal stress, ab initio

UMENO, Y.; ČERNÝ, M.

2010

10.03.2008

AMER PHYSICAL SOC

ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA

1098-0121

PHYSICAL REVIEW B

77

3

Spojené státy americké

100101

100101-4

4

http://hdl.handle.net/