Detail publikace

Memristors with Initial Low-Resistive State for Efficient Neuromorphic Systems

ZHU, K. MAHMOODI, M. FAHIMI, Z. XIAO, Y. WANG, T. BUKVIŠOVÁ, K. KOLÍBAL, M. ROLDÁN, J. PEREZ, D. AGUIRRE, F. LANZA, M.

Originální název

Memristors with Initial Low-Resistive State for Efficient Neuromorphic Systems

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

Memristive electronic synapses are attractive to construct artificial neural networks (ANNs) for neuromorphic computing systems, owing to their excellent electronic performance, high integration density, and low cost. However, the necessity of initializing their conductance through a forming process requires additional peripheral hardware and complex programming algorithms. Herein, the first fabrication of memristors that are initially in low-resistive state (LRS) is reported, which exhibit homogenous initial resistance and switching voltages. When used as electronic synapses in a neuromorphic system to classify images from the CIFAR-10 dataset (Canadian Institute For Advanced Research), the memristors offer x1.83 better throughput per area and consume x0.85 less energy than standard memristors (i.e., with the necessity of forming), which stems from approximate to 63% better density and approximate to 17% faster operation. It is demonstrated in the results that tuning the local properties of materials embedded in memristive electronic synapses is an attractive strategy that can lead to an improved neuromorphic performance at the system level.

Klíčová slova

forming-free devices; low-resistive state; memristors; neuromorphic systems; titanium dioxide

Autoři

ZHU, K.; MAHMOODI, M.; FAHIMI, Z.; XIAO, Y.; WANG, T.; BUKVIŠOVÁ, K.; KOLÍBAL, M.; ROLDÁN, J.; PEREZ, D.; AGUIRRE, F.; LANZA, M.

Vydáno

21. 3. 2022

Nakladatel

Wiley

Místo

HOBOKEN

ISSN

2640-4567

Periodikum

Advanced Intelligent Systems

Ročník

4

Číslo

3

Stát

Spojené státy americké

Strany od

2200001

Strany do

220001

Strany počet

9

URL

https://onlinelibrary.wiley.com/doi/10.1002/aisy.202200001

Plný text v Digitální knihovně

http://hdl.handle.net/11012/204285

BibTex

@article{BUT177525,
  author="Kaichen {Zhu} and Mohammad Reza {Mahmoodi} and Zahra {Fahimi} and Yiping {Xiao} and Tao {Wang} and Kristýna {Bukvišová} and Miroslav {Kolíbal} and Juan Bautista {Roldán} and David {Perez} and Fernando {Aguirre} and Mario {Lanza}",
  title="Memristors with Initial Low-Resistive State for Efficient Neuromorphic Systems",
  journal="Advanced Intelligent Systems",
  year="2022",
  volume="4",
  number="3",
  pages="2200001--220001",
  doi="10.1002/aisy.202200001",
  issn="2640-4567",
  url="https://onlinelibrary.wiley.com/doi/10.1002/aisy.202200001"
}