Detail publikace

A method for measuring the effect of total ionising dose on temperature coefficients of semiconductor devices

Jiri Hofman

Originální název

A method for measuring the effect of total ionising dose on temperature coefficients of semiconductor devices

Typ

přednáška

Jazyk

angličtina

Originální abstrakt

This work presents a new test method that allows in-situ measurements of radiation-induced changes in temperature coefficients to be made. The preliminary results of a pilot experiment on commercial PMOS transistors and voltage references will be presented and discussed.

Klíčová slova

total ionizing dose, PMOS transistor, voltage reference, temperature coefficient

Autoři

Jiri Hofman

Vydáno

25. 3. 2015

Strany od

1

Strany do

26

Strany počet

26

BibTex

@misc{BUT114090,
  author="Jiří {Hofman} and Jiří {Háze} and Richard {Sharp} and Andrew {Holmes-Siedle}",
  title="A method for measuring the effect of total ionising dose on temperature coefficients of semiconductor devices",
  year="2015",
  pages="1--26",
  note="lecture"
}