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Detail publikačního výsledku
HERENCSÁR, N.; MINAEI, S.; KOTON, J.; VRBA, K.
Originální název
Voltage-Mode All-Pass Filter Design Using Simple CMOS Transconductor: Non-Ideal Case Study
Anglický název
Druh
Stať ve sborníku v databázi WoS či Scopus
Originální abstrakt
In this paper, basic transconductor composed of only p-channel and n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) and its utilization for low-voltage first-order voltage-mode (VM) all-pass filter (APF) design is studied. For initial filter design a general structure employing single transconductor and two admittances was proposed. By choosing passive components and considering real behavior of MOSFETs, i.e. parasitic capacitances and output resistances, six specific cases for VM APF design are discussed. SPICE simulations using IBM 0.13 mm level-7 SIGE013 CMOS process BSIM3v3.1 parameters and with +-0.75 V supply voltages are included to support the theoretical results. The selected solution was designed at pole frequency of 219 MHz and consumes 480 uW power.
Anglický abstrakt
Klíčová slova
Analog signal processing, all-pass filter, parasitic capacitances, transconductor, voltage-mode circuit
Klíčová slova v angličtině
Autoři
Rok RIV
2017
Vydáno
01.07.2014
Místo
Berlin, Germany
ISBN
978-1-4799-8497-8
Kniha
Proceedings of the 2015 38th International Conference on Telecommunications and Signal Processing (TSP)
Strany od
677
Strany do
681
Strany počet
5
Plný text v Digitální knihovně
http://hdl.handle.net/
BibTex
@inproceedings{BUT108740, author="Norbert {Herencsár} and Shahram {Minaei} and Jaroslav {Koton} and Kamil {Vrba}", title="Voltage-Mode All-Pass Filter Design Using Simple CMOS Transconductor: Non-Ideal Case Study", booktitle="Proceedings of the 2015 38th International Conference on Telecommunications and Signal Processing (TSP)", year="2014", pages="677--681", address="Berlin, Germany", doi="10.1109/TSP.2015.7296349", isbn="978-1-4799-8497-8" }