Detail publikačního výsledku

Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements

BIOLEK, Z.; BIOLEK, D.; BIOLKOVÁ, V.

Originální název

Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements

Anglický název

Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements

Druh

Článek WoS

Originální abstrakt

The memory elements, memristor being the best known of them, driven by a periodical waveform exhibit the well-known pinched hysteresis loops. The hysteresis is caused by a memory effect which results in a nonzero area closed within the loop. This paper presents an analytical formula for the loop area. This formula is then applied to memory elements whose parameter-vs.-state maps are modeled in the polynomial form. The TiO2 memristor, a special subset of the above elements, is analyzed as a demonstration example.

Anglický abstrakt

The memory elements, memristor being the best known of them, driven by a periodical waveform exhibit the well-known pinched hysteresis loops. The hysteresis is caused by a memory effect which results in a nonzero area closed within the loop. This paper presents an analytical formula for the loop area. This formula is then applied to memory elements whose parameter-vs.-state maps are modeled in the polynomial form. The TiO2 memristor, a special subset of the above elements, is analyzed as a demonstration example.

Klíčová slova

Memory element, memristor, pinched hysteresis loop

Klíčová slova v angličtině

Memory element, memristor, pinched hysteresis loop

Autoři

BIOLEK, Z.; BIOLEK, D.; BIOLKOVÁ, V.

Rok RIV

2014

Vydáno

01.04.2013

Nakladatel

Společnost pro radioeletronické inženýrství

Místo

Brno

ISSN

1210-2512

Periodikum

Radioengineering

Svazek

22

Číslo

1

Stát

Česká republika

Strany od

132

Strany do

135

Strany počet

4

BibTex

@article{BUT99802,
  author="Zdeněk {Biolek} and Dalibor {Biolek} and Viera {Biolková}",
  title="Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements",
  journal="Radioengineering",
  year="2013",
  volume="22",
  number="1",
  pages="132--135",
  issn="1210-2512"
}