Detail publikačního výsledku

Surface phonon scattering in epitaxial graphene on 6H-SiC

GIESBERS, A.; PROCHÁZKA, P.; FLIPSE, C.

Originální název

Surface phonon scattering in epitaxial graphene on 6H-SiC

Anglický název

Surface phonon scattering in epitaxial graphene on 6H-SiC

Druh

Článek recenzovaný mimo WoS a Scopus

Originální abstrakt

We show the growth of high-quality epitaxial graphene on 6H-SiC with Raman signatures comparable to exfoliated flakes. We ascribe the remaining low-quality transport properties to the strong electron-phonon coupling to two low-energy phonon modes at 70 and 16 meV. The coupling of these modes is enhanced by the defects present in the SiC substrate and buffer layer. Measurements of the mobility versus carrier concentration show a square-root dependence, corroborating the importance of surface phonon scattering in the limited mobility of graphene on SiC.

Anglický abstrakt

We show the growth of high-quality epitaxial graphene on 6H-SiC with Raman signatures comparable to exfoliated flakes. We ascribe the remaining low-quality transport properties to the strong electron-phonon coupling to two low-energy phonon modes at 70 and 16 meV. The coupling of these modes is enhanced by the defects present in the SiC substrate and buffer layer. Measurements of the mobility versus carrier concentration show a square-root dependence, corroborating the importance of surface phonon scattering in the limited mobility of graphene on SiC.

Klíčová slova

Graphene, SiC, Phonon scattring

Klíčová slova v angličtině

Graphene, SiC, Phonon scattring

Autoři

GIESBERS, A.; PROCHÁZKA, P.; FLIPSE, C.

Rok RIV

2014

Vydáno

06.05.2013

ISSN

1098-0121

Periodikum

PHYSICAL REVIEW B

Svazek

87

Číslo

19

Stát

Spojené státy americké

Strany od

195405-1

Strany do

195405-5

Strany počet

5