Detail publikačního výsledku

Study of Electric Field Distribution and Low Frequency Noise of CdZnTe Radiation Detectors

ŠIK, O.; GRMELA, L.; ELHADIDY, H.; DĚDIČ, V.; ŠIKULA, J.; GRMELA, P.; FRANC, J.; ŠKARVADA, P.; HOLCMAN, V.

Originální název

Study of Electric Field Distribution and Low Frequency Noise of CdZnTe Radiation Detectors

Anglický název

Study of Electric Field Distribution and Low Frequency Noise of CdZnTe Radiation Detectors

Druh

Článek recenzovaný mimo WoS a Scopus

Originální abstrakt

Polarization phenomena in a metal-semiconductor-metal (M-S-M) structure of metallic Schottky contacts deposited on CdZnTe radiation detectors were studied. We evaluate the distribution of the electric field along the biased M-S-M structure by Pockels measurements. The results show that almost all the electric field is developed across the depletion layer of the reverse-biased contact. The noise measurements of the CdZnTe detectors studied show that the dominant noise is 1/f m noise. The 1/f m noise, with parameter m close to unity, is present at frequencies bellow 100 Hz and its bandwidth decreases in the course of the polarization process. At higher frequencies, we observed an increase of the m parameter to 2, which indicates a strengthened effect of generation-recombination processes. In the frequency band of dominating 1/f m = 1 noise, the increase of magnitude of noise spectral density was proportional to the power of 6, in relation to current through the detector. This high value is explained as a result of a screening effect of the space charge buildup during the polarization

Anglický abstrakt

Polarization phenomena in a metal-semiconductor-metal (M-S-M) structure of metallic Schottky contacts deposited on CdZnTe radiation detectors were studied. We evaluate the distribution of the electric field along the biased M-S-M structure by Pockels measurements. The results show that almost all the electric field is developed across the depletion layer of the reverse-biased contact. The noise measurements of the CdZnTe detectors studied show that the dominant noise is 1/f m noise. The 1/f m noise, with parameter m close to unity, is present at frequencies bellow 100 Hz and its bandwidth decreases in the course of the polarization process. At higher frequencies, we observed an increase of the m parameter to 2, which indicates a strengthened effect of generation-recombination processes. In the frequency band of dominating 1/f m = 1 noise, the increase of magnitude of noise spectral density was proportional to the power of 6, in relation to current through the detector. This high value is explained as a result of a screening effect of the space charge buildup during the polarization

Klíčová slova

Gamma detectors, CdTe. Polarization, Pockels Effect, Noise

Klíčová slova v angličtině

Gamma detectors, CdTe. Polarization, Pockels Effect, Noise

Autoři

ŠIK, O.; GRMELA, L.; ELHADIDY, H.; DĚDIČ, V.; ŠIKULA, J.; GRMELA, P.; FRANC, J.; ŠKARVADA, P.; HOLCMAN, V.

Rok RIV

2014

Vydáno

06.06.2013

Nakladatel

IOP

Místo

London, Great Britain

ISSN

1748-0221

Periodikum

Journal of Instrumentation

Svazek

6

Číslo

23

Stát

Spojené království Velké Británie a Severního Irska

Strany od

1

Strany do

6

Strany počet

6

URL

http://iopscience.iop.org/1748-0221/8/06/C06005

BibTex

@article{BUT99274,
  author="Ondřej {Šik} and Lubomír {Grmela} and Hassan {Elhadidy} and Václav {Dědič} and Josef {Šikula} and Petr {Grmela} and Jan {Franc} and Pavel {Škarvada} and Vladimír {Holcman}",
  title="Study of Electric Field Distribution and Low Frequency Noise of CdZnTe Radiation Detectors",
  journal="Journal of Instrumentation",
  year="2013",
  volume="6",
  number="23",
  pages="1--6",
  doi="10.1088/1748-0221/8/06/C06005",
  issn="1748-0221",
  url="http://iopscience.iop.org/1748-0221/8/06/C06005"
}