Detail publikačního výsledku

Contact Quality Analysis and Noise Sources Determination of CdZnTe-Based High Energy Photon Detectors

ŠIK, O.; ŠKARVADA, P.; GRMELA, L.; ELHADIDY, H.; VONDRA, M.; ŠIKULA, J.; FRANC, J.

Originální název

Contact Quality Analysis and Noise Sources Determination of CdZnTe-Based High Energy Photon Detectors

Anglický název

Contact Quality Analysis and Noise Sources Determination of CdZnTe-Based High Energy Photon Detectors

Druh

Článek recenzovaný mimo WoS a Scopus

Originální abstrakt

Experimental studies of transport and noise characteristics of cadmium-zinc-telluride (CdZnTe) crystal with symmetric gold contacts and a guard ring electrode have been carried out. The current-voltage (IV) characteristics and the noise spectral density were measured at room temperature under the dark. The sample with disconnected guard ring electrode showed symmetric characteristics for both bias voltage polarities. The shape IV characteristics indicated the presence of carrier injection, leading to IV characteristics non-linearity. Semiconductor surface has been identified as the main noise and leakage current source. After connecting the guard ring electrode, the leakage currents were suppressed by 2 orders and the noise spectral density decreased by 5 orders. In case of connected guard ring electrode, the asymmetry of IV characteristics has been observed. The contact with worse rectifying properties had higher contribution of noise to the detector system. Increasing bias voltage causes steeper detector additive noise growth when the guard ring electrode disconnected.

Anglický abstrakt

Experimental studies of transport and noise characteristics of cadmium-zinc-telluride (CdZnTe) crystal with symmetric gold contacts and a guard ring electrode have been carried out. The current-voltage (IV) characteristics and the noise spectral density were measured at room temperature under the dark. The sample with disconnected guard ring electrode showed symmetric characteristics for both bias voltage polarities. The shape IV characteristics indicated the presence of carrier injection, leading to IV characteristics non-linearity. Semiconductor surface has been identified as the main noise and leakage current source. After connecting the guard ring electrode, the leakage currents were suppressed by 2 orders and the noise spectral density decreased by 5 orders. In case of connected guard ring electrode, the asymmetry of IV characteristics has been observed. The contact with worse rectifying properties had higher contribution of noise to the detector system. Increasing bias voltage causes steeper detector additive noise growth when the guard ring electrode disconnected.

Klíčová slova

cdte, surface conductivity, noise

Klíčová slova v angličtině

cdte, surface conductivity, noise

Autoři

ŠIK, O.; ŠKARVADA, P.; GRMELA, L.; ELHADIDY, H.; VONDRA, M.; ŠIKULA, J.; FRANC, J.

Rok RIV

2014

Vydáno

06.06.2013

Nakladatel

IOP Publishing

Místo

London

ISSN

0031-8949

Periodikum

Physica Scripta

Svazek

85

Číslo

03

Stát

Spojené království Velké Británie a Severního Irska

Strany od

1

Strany do

5

Strany počet

5

URL

http://iopscience.iop.org/1402-4896/2013/T157/014064

BibTex

@article{BUT99230,
  author="Ondřej {Šik} and Pavel {Škarvada} and Lubomír {Grmela} and Hassan {Elhadidy} and Marek {Vondra} and Josef {Šikula} and Jan {Franc}",
  title="Contact Quality Analysis and Noise Sources Determination of CdZnTe-Based High Energy Photon Detectors",
  journal="Physica Scripta",
  year="2013",
  volume="85",
  number="03",
  pages="1--5",
  issn="0031-8949",
  url="http://iopscience.iop.org/1402-4896/2013/T157/014064"
}