Detail publikačního výsledku

Contacts charge transport and additional noise properties of semiconductor CdTe sensors

ŠIK, O.; GRMELA, L.; ŠIKULA, J.

Originální název

Contacts charge transport and additional noise properties of semiconductor CdTe sensors

Anglický název

Contacts charge transport and additional noise properties of semiconductor CdTe sensors

Druh

Stať ve sborníku v databázi WoS či Scopus

Originální abstrakt

Contact quality analysis of Cadmium-Telluride detector has been conducted. IV characteristics at operating temperatures T = 305 K, 315 K, 325 K were measured. Results showed asymmetry of IV characteristics for negative and positive bias indicated by increased leakage current in case of negative biasing. Noise contributions of contacts were evaluated. Reverse biased contact in negative was found as dominant source of low frequency noise.

Anglický abstrakt

Contact quality analysis of Cadmium-Telluride detector has been conducted. IV characteristics at operating temperatures T = 305 K, 315 K, 325 K were measured. Results showed asymmetry of IV characteristics for negative and positive bias indicated by increased leakage current in case of negative biasing. Noise contributions of contacts were evaluated. Reverse biased contact in negative was found as dominant source of low frequency noise.

Klíčová slova

CdTe , noise , quality analysis , spectrometer

Klíčová slova v angličtině

CdTe , noise , quality analysis , spectrometer

Autoři

ŠIK, O.; GRMELA, L.; ŠIKULA, J.

Rok RIV

2014

Vydáno

03.04.2013

Nakladatel

IEEE Thailand Section

Místo

Bangkok, Thailand

ISBN

978-1-4673-5694-7

Kniha

Proceedings of the 2012 IEEE International Conference on Electron Devices and Solid State Circuit (EDSSC),

Strany od

1

Strany do

4

Strany počet

4

URL

http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6482863

BibTex

@inproceedings{BUT98887,
  author="Ondřej {Šik} and Lubomír {Grmela} and Josef {Šikula}",
  title="Contacts charge transport and additional noise properties of semiconductor CdTe sensors",
  booktitle="Proceedings of the 2012 IEEE International Conference on Electron Devices and Solid State Circuit (EDSSC),",
  year="2013",
  pages="1--4",
  publisher="IEEE Thailand Section",
  address="Bangkok, Thailand",
  doi="10.1109/EDSSC.2012.6482863",
  isbn="978-1-4673-5694-7",
  url="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6482863"
}