Detail publikačního výsledku

Noise Contact Study of CdTe Radiation Detectors

GRMELA, L.; ŠIK, O.; ŠIKULA, J.

Originální název

Noise Contact Study of CdTe Radiation Detectors

Anglický název

Noise Contact Study of CdTe Radiation Detectors

Druh

Stať ve sborníku v databázi WoS či Scopus

Originální abstrakt

We have compared noise spectra and charge transport properties analysis results of CdTe radiation detectors: low-ohmic and semi-insulating. We observed assymmetry of IV characteristics of the low-ohmic detector between "normal" nad "reverse" bias, showing improper quality of contacts preparation, which resulted in higher concentration of impurities in M-S interface area. This finding was supported by the fact that the low frequency noise spectral density magnitude was proportional to applied voltage with exponent of 2.7, which is higher than theoretical value 2. The more advanced manufacturing technology of the semi-insulating detector resulted in symmetric contacts IV characteristics and its linear character. Also, this detector showed lower increase of noise spectral density magnitude with exponent of 2.3.

Anglický abstrakt

We have compared noise spectra and charge transport properties analysis results of CdTe radiation detectors: low-ohmic and semi-insulating. We observed assymmetry of IV characteristics of the low-ohmic detector between "normal" nad "reverse" bias, showing improper quality of contacts preparation, which resulted in higher concentration of impurities in M-S interface area. This finding was supported by the fact that the low frequency noise spectral density magnitude was proportional to applied voltage with exponent of 2.7, which is higher than theoretical value 2. The more advanced manufacturing technology of the semi-insulating detector resulted in symmetric contacts IV characteristics and its linear character. Also, this detector showed lower increase of noise spectral density magnitude with exponent of 2.3.

Klíčová slova

CdTe, 1/f noise, semiconductor reliability, semiconductor charge transport mechanism

Klíčová slova v angličtině

CdTe, 1/f noise, semiconductor reliability, semiconductor charge transport mechanism

Autoři

GRMELA, L.; ŠIK, O.; ŠIKULA, J.

Rok RIV

2013

Vydáno

17.10.2012

Místo

Košice, Slovensko

ISBN

978-80-553-1175-3

Kniha

Proceedings of the Scientific Conference Physics of Materials 2012

Edice

první

Strany od

99

Strany do

104

Strany počet

6

BibTex

@inproceedings{BUT96521,
  author="Lubomír {Grmela} and Ondřej {Šik} and Josef {Šikula}",
  title="Noise Contact Study of CdTe Radiation Detectors",
  booktitle="Proceedings of the Scientific Conference Physics of Materials 2012",
  year="2012",
  series="první",
  number="1",
  pages="99--104",
  address="Košice, Slovensko",
  isbn="978-80-553-1175-3"
}