Detail publikačního výsledku

Low Noise as a Diagnostic Tool for GaSb based Laser Diodes Prepared by Molecular Beam Epitaxy

LUŇÁK, M.; CHOBOLA, Z.; VANĚK, J.; HULICIUS, E.

Originální název

Low Noise as a Diagnostic Tool for GaSb based Laser Diodes Prepared by Molecular Beam Epitaxy

Anglický název

Low Noise as a Diagnostic Tool for GaSb based Laser Diodes Prepared by Molecular Beam Epitaxy

Druh

Článek WoS

Originální abstrakt

Trasnport and noise characteristics of forward biased semiconductor lasers diodes GaSb based VCSE(Vertical Cavity Surface Emitting) laser were prepared by MBE (Molecular Beam Epitaxy) were measured in order to evaluate the new MBE technology.

Anglický abstrakt

Trasnport and noise characteristics of forward biased semiconductor lasers diodes GaSb based VCSE(Vertical Cavity Surface Emitting) laser were prepared by MBE (Molecular Beam Epitaxy) were measured in order to evaluate the new MBE technology.

Klíčová slova

noise, spectroscopy, Laser

Klíčová slova v angličtině

noise, spectroscopy, Laser

Autoři

LUŇÁK, M.; CHOBOLA, Z.; VANĚK, J.; HULICIUS, E.

Rok RIV

2013

Vydáno

13.05.2012

Nakladatel

IEEE Serbie

Místo

Niš, Serbie

ISSN

2159-1660

Periodikum

International Conference on Microelectronics-MIEL

Svazek

2012

Číslo

1

Stát

Spojené státy americké

Strany od

343

Strany do

346

Strany počet

4

BibTex

@article{BUT94487,
  author="Miroslav {Luňák} and Zdeněk {Chobola} and Jiří {Vaněk} and Eduard {Hulicius}",
  title="Low Noise as a Diagnostic Tool for GaSb based Laser Diodes Prepared by Molecular Beam Epitaxy",
  journal="International Conference on Microelectronics-MIEL",
  year="2012",
  volume="2012",
  number="1",
  pages="343--346",
  issn="2159-1660"
}