Detail publikace

Low Noise as a Diagnostic Tool for GaSb based Laser Diodes Prepared by Molecular Beam Epitaxy

LUŇÁK, M. CHOBOLA, Z. VANĚK, J. HULICIUS, E.

Originální název

Low Noise as a Diagnostic Tool for GaSb based Laser Diodes Prepared by Molecular Beam Epitaxy

Anglický název

Low Noise as a Diagnostic Tool for GaSb based Laser Diodes Prepared by Molecular Beam Epitaxy

Jazyk

en

Originální abstrakt

Trasnport and noise characteristics of forward biased semiconductor lasers diodes GaSb based VCSE(Vertical Cavity Surface Emitting) laser were prepared by MBE (Molecular Beam Epitaxy) were measured in order to evaluate the new MBE technology.

Anglický abstrakt

Trasnport and noise characteristics of forward biased semiconductor lasers diodes GaSb based VCSE(Vertical Cavity Surface Emitting) laser were prepared by MBE (Molecular Beam Epitaxy) were measured in order to evaluate the new MBE technology.

Dokumenty

BibTex 


@article{BUT94487,
  author="Miroslav {Luňák} and Zdeněk {Chobola} and Jiří {Vaněk} and Eduard {Hulicius}",
  title="Low Noise as a Diagnostic Tool for GaSb based Laser Diodes Prepared by Molecular Beam Epitaxy",
  annote="Trasnport and noise characteristics of forward biased semiconductor lasers diodes GaSb based VCSE(Vertical Cavity Surface Emitting) laser were prepared by MBE (Molecular Beam Epitaxy) were measured in order to evaluate the new MBE technology.",
  address="IEEE Serbie",
  chapter="94487",
  institution="IEEE Serbie",
  number="1",
  volume="2012",
  year="2012",
  month="may",
  pages="343--346",
  publisher="IEEE Serbie",
  type="journal article in Web of Science"
}