Detail publikačního výsledku

Nanoelectronic device structures at terahertz frequency

HORÁK, M.

Originální název

Nanoelectronic device structures at terahertz frequency

Anglický název

Nanoelectronic device structures at terahertz frequency

Druh

Stať ve sborníku v databázi WoS či Scopus

Originální abstrakt

Potential barriers of different types (rectangular, triangle, parabolic) with a dc-bias and a small ac-signal in the THz-frequency band are investigated in this paper. The height of the potential barrier is modulated by the high frequency signal. If electrons penetrate through the barrier they can emit or absorb usually one or even more energy quanta, thus the electron wave function behind the barrier is a superposition of different harmonics. If the harmonics of the electron current density are known the complex admittance and other electrical parameters of the structure can be found.

Anglický abstrakt

Potential barriers of different types (rectangular, triangle, parabolic) with a dc-bias and a small ac-signal in the THz-frequency band are investigated in this paper. The height of the potential barrier is modulated by the high frequency signal. If electrons penetrate through the barrier they can emit or absorb usually one or even more energy quanta, thus the electron wave function behind the barrier is a superposition of different harmonics. If the harmonics of the electron current density are known the complex admittance and other electrical parameters of the structure can be found.

Klíčová slova

Nanoelectronic, terahertz, potential barrier, transmittance, Schrödinger equation

Klíčová slova v angličtině

Nanoelectronic, terahertz, potential barrier, transmittance, Schrödinger equation

Autoři

HORÁK, M.

Vydáno

01.07.2003

Nakladatel

Czech Technical University

Místo

Praha

ISBN

80-86059-35-9

Kniha

3rd International conference on Advanced Engineering Design AED 2003

Strany od

F1.2

Strany počet

8