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Detail publikačního výsledku
DALLAEVA, D.; BILALOV, B.; SAFARALIEV, G.; KARDASHOVA, G.; TOMÁNEK, P.; ARKHIPOV, A.
Originální název
Investigation of the ion sputtering process of the (SiC)1-x(AlN)x ceramic target
Anglický název
Druh
Stať ve sborníku v databázi WoS či Scopus
Originální abstrakt
This paper describes the theoretical analysis of ion sputtering of multicomponent targets on the basis of (SiC)1-x(AlN)x. The features of ion sputtering are studied.They are connected with consideration necessity of sputtering ratio of multicomponent materials and it changes with the increasing of ion influence dose. Moreover, the effect of low metal concentrations in silicon carbide on th sputtering velocity and layer formation is also taken into account.
Anglický abstrakt
Klíčová slova
ion-plasma sputtering, sputtering velocity, growth rate, ion energy
Klíčová slova v angličtině
Autoři
Rok RIV
2013
Vydáno
28.06.2012
Nakladatel
Vysoke uceni technicke v Brne
Místo
LITERA, Tabor 43a, 61200 Brno
ISBN
978-80-214-4539-0
Kniha
IMAPS CS International Conference. Electronic Devices and Systems. EDS'12. Proceedings.
Edice
FIRST
Strany od
49
Strany do
53
Strany počet
5
BibTex
@inproceedings{BUT93002, author="Dinara {Sobola} and Bilal {Bilalov} and Gadjimet {Safaraliev} and Gulnara {Kardashova} and Pavel {Tománek} and Alexandr {Arkhipov}", title="Investigation of the ion sputtering process of the (SiC)1-x(AlN)x ceramic target", booktitle="IMAPS CS International Conference. Electronic Devices and Systems. EDS'12. Proceedings.", year="2012", series="FIRST", pages="49--53", publisher="Vysoke uceni technicke v Brne", address="LITERA, Tabor 43a, 61200 Brno", isbn="978-80-214-4539-0" }