Detail publikačního výsledku

Obtaining of epitaxial layers of silicon carbide and aluminum nitride solid solution by sublimation.

BILALOV, B.; KARDASHOVA, G.; EUBOV, S.; SOBOLA, D.; GADJEV, A.

Originální název

Obtaining of epitaxial layers of silicon carbide and aluminum nitride solid solution by sublimation.

Anglický název

Obtaining of epitaxial layers of silicon carbide and aluminum nitride solid solution by sublimation.

Druh

Článek recenzovaný mimo WoS a Scopus

Originální abstrakt

The purpose of the study is obtaining of epylayers of solid solutions on the basis of silicon carbide and aluminum nitride (SiC)1-x(AlN)x on the silicon carbide substrates by sublimation and investigation of structure and composition of the samples.

Anglický abstrakt

The purpose of the study is obtaining of epylayers of solid solutions on the basis of silicon carbide and aluminum nitride (SiC)1-x(AlN)x on the silicon carbide substrates by sublimation and investigation of structure and composition of the samples.

Klíčová slova

wide-band-gap semiconductor, atomic force microscopy, scanning electron microscopy, solid solution

Klíčová slova v angličtině

wide-band-gap semiconductor, atomic force microscopy, scanning electron microscopy, solid solution

Autoři

BILALOV, B.; KARDASHOVA, G.; EUBOV, S.; SOBOLA, D.; GADJEV, A.

Vydáno

30.04.2010

Nakladatel

PI FS 77-39604

Místo

Krasnoyarsk

ISSN

2072-0831

Periodikum

In the World of Scientific Discoveries

Svazek

2010

Číslo

4.510

Stát

Ruská federace

Strany od

24

Strany do

25

Strany počet

2

URL

http://www.nkras.ru

BibTex

@article{BUT76514,
  author="Bilal {Bilalov} and Gulnara {Kardashova} and Samur {Eubov} and Dinara {Sobola} and Asadula {Gadjev}",
  title="Obtaining of epitaxial layers of silicon carbide and aluminum nitride solid solution by sublimation.",
  journal="In the World of Scientific Discoveries",
  year="2010",
  volume="2010",
  number="4.510",
  pages="24--25",
  issn="2072-0831",
  url="http://www.nkras.ru"
}