In-situ observation of <110> oriented Ge nanowire growth and associated collector droplet behavior

In-situ observation of <110> oriented Ge nanowire growth and associated collector droplet behavior

Článek WoS

Using in-situ microscopy, we show that germanium nanowires can be grown by a vapor-liquid-solid process in h110i directions both on Ge(100) and Ge(111) substrates if very low supersaturation in the collector droplet is ensured. This can be provided if thermal evaporation is utilized. Such a behavior is also in agreement with earlier chemical vapor deposition experiments, where h110i oriented wires were obtained for very small wire diameters only. Our conclusions are supported by in-situ observations of nanowire kinking towards h111i direction occurring more frequently at higher evaporation rates

Using in-situ microscopy, we show that germanium nanowires can be grown by a vapor-liquid-solid process in h110i directions both on Ge(100) and Ge(111) substrates if very low supersaturation in the collector droplet is ensured. This can be provided if thermal evaporation is utilized. Such a behavior is also in agreement with earlier chemical vapor deposition experiments, where h110i oriented wires were obtained for very small wire diameters only. Our conclusions are supported by in-situ observations of nanowire kinking towards h111i direction occurring more frequently at higher evaporation rates

Nanowires, VLS growth, SEM.

Nanowires, VLS growth, SEM.

KOLÍBAL, M.; VYSTAVĚL, T.; NOVÁK, L.; MACH, J.; ŠIKOLA, T.

2012

06.10.2011

0003-6951

APPLIED PHYSICS LETTERS

99

14

Spojené státy americké

143113-1

143113-3

3