Detail publikačního výsledku

Behavioral Modeling of Memcapacitor

BIOLEK, D.; BIOLEK, Z.; BIOLKOVÁ, V.

Originální název

Behavioral Modeling of Memcapacitor

Anglický název

Behavioral Modeling of Memcapacitor

Druh

Článek WoS

Originální abstrakt

Two behavioral models of memcapacitor are developed and implemented in SPICE-compatible simulators. Both models are related to the charge-controlled memcapacitor, the capacitance of which is controlled by the amount of electric charge conveyed through it. The first model starts from the state description of memcapacitor whereas the second one uses the memcapacitor constitutive relation as the only input data. Results of transient analyses clearly show the basic fingerprints of the memcapacitor.

Anglický abstrakt

Two behavioral models of memcapacitor are developed and implemented in SPICE-compatible simulators. Both models are related to the charge-controlled memcapacitor, the capacitance of which is controlled by the amount of electric charge conveyed through it. The first model starts from the state description of memcapacitor whereas the second one uses the memcapacitor constitutive relation as the only input data. Results of transient analyses clearly show the basic fingerprints of the memcapacitor.

Klíčová slova

Memcapacitor, memristor, SPICE, constitutive relation.

Klíčová slova v angličtině

Memcapacitor, memristor, SPICE, constitutive relation.

Autoři

BIOLEK, D.; BIOLEK, Z.; BIOLKOVÁ, V.

Rok RIV

2012

Vydáno

12.11.2011

Nakladatel

Společnost pro radioelektronické inženýrství

Místo

Brno

ISSN

1210-2512

Periodikum

Radioengineering

Svazek

20

Číslo

1

Stát

Česká republika

Strany od

228

Strany do

233

Strany počet

6

BibTex

@article{BUT72957,
  author="Dalibor {Biolek} and Zdeněk {Biolek} and Viera {Biolková}",
  title="Behavioral Modeling of Memcapacitor",
  journal="Radioengineering",
  year="2011",
  volume="20",
  number="1",
  pages="228--233",
  issn="1210-2512"
}