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PAVELKA, J., ŠIKULA, J., SEDLÁKOVÁ, V., GRMELA, L., TACANO, M., HASHIGUCHI, S.
Originální název
Low Frequency Noise of Thin Ta2O5 Amorphous Films
Anglický název
Druh
Stať ve sborníku v databázi WoS či Scopus
Originální abstrakt
A low frequency noise and charge carriers transport mechanism analysis have been performed on Ta - Ta2O5 - MnO2 heterostructures of various thickness to determine the current noise sources. The model of MIS structure can be used to give physical interpretation of VA characteristic both in normal and reverse modes. The self-healing process based on the high temeprature MnO2 - Mn2O3 transformation was studied and its kinetic determined on the basis of noise spectral density changes. The correlation between leakage current and noise spectral density was evaluated.
Anglický abstrakt
Klíčová slova v angličtině
low frequency noise, tantalum pentoxide, self-healing, reliability
Autoři
Vydáno
01.01.2001
Nakladatel
World Scientific
Místo
Gainesville, Florida, USA
ISBN
981-02-4677-3
Kniha
Proceedings of the 16th International Conference Noise in Physical Systems and 1/f Fluctuations ICNF 2001
Strany od
91
Strany počet
4
BibTex
@inproceedings{BUT6854, author="Jan {Pavelka} and Josef {Šikula} and Vlasta {Sedláková} and Lubomír {Grmela} and Munecazu {Tacano} and Sumihisa {Hashiguchi}", title="Low Frequency Noise of Thin Ta2O5 Amorphous Films", booktitle="Proceedings of the 16th International Conference Noise in Physical Systems and 1/f Fluctuations ICNF 2001", year="2001", pages="4", publisher="World Scientific", address="Gainesville, Florida, USA", isbn="981-02-4677-3" }