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Detail publikačního výsledku
TOMÁNEK, P., BENEŠOVÁ, M., DOBIS, P., BRÜSTLOVÁ, J., GRMELA, L.
Originální název
Local photoluminescence measurement of semiconductor InGaAs quantum dot excited states
Anglický název
Druh
Abstrakt
Originální abstrakt
Recent advances in miniaturized systems have demonstrated that materials with nanometer scale structures can be successfully designed at the atomic and molecular levels to exhibit unique properties by using many methods including SNOM. The semiconductor quantum dots (QD)sue to their small size provide a fully quantized system with a strong 3-D carrier confinement with discrete, atomic like density of states. This feature makes QD very attractive for diverse optoelectronic devices. The photoluminescence measurements performed by SNOM show the difference of quantum dots in size, shape, indium contain and grown technique.
Anglický abstrakt
Klíčová slova
InGaAs quantum dots, excited states, photoluminescence, near-field optics
Klíčová slova v angličtině
Autoři
Vydáno
26.04.2004
Nakladatel
SPIE, Europe
Kniha
Photonics Europe
Strany od
178
Strany počet
1
BibTex
@misc{BUT59947, author="Pavel {Tománek} and Markéta {Benešová} and Pavel {Dobis} and Jitka {Brüstlová} and Lubomír {Grmela}", title="Local photoluminescence measurement of semiconductor InGaAs quantum dot excited states", booktitle="Photonics Europe", year="2004", pages="1", publisher="SPIE, Europe", note="Abstract" }