Detail publikačního výsledku

Transistor Models Paramter Extraction

RECMAN, M.

Originální název

Transistor Models Paramter Extraction

Anglický název

Transistor Models Paramter Extraction

Druh

Stať ve sborníku v databázi WoS či Scopus

Originální abstrakt

Direct extraction methods are believed to be far from providing the accuracy an optimized-based extraction is capable of producing. On the other hand optimization-based extraction generates models leaving physical meaning of their parameters. To generate both accurate and physical models much effort is needed in developing direct and optimization-based extraction methods. The paper reviews the fudamental problems connected with these methods and brings the example of extractor generating optimized physically correct transistor models.

Anglický abstrakt

Direct extraction methods are believed to be far from providing the accuracy an optimized-based extraction is capable of producing. On the other hand optimization-based extraction generates models leaving physical meaning of their parameters. To generate both accurate and physical models much effort is needed in developing direct and optimization-based extraction methods. The paper reviews the fudamental problems connected with these methods and brings the example of extractor generating optimized physically correct transistor models.

Klíčová slova

transistor models, parameter extraction,

Klíčová slova v angličtině

transistor models, parameter extraction,

Autoři

RECMAN, M.

Vydáno

01.01.2002

Nakladatel

Ing. Z. Novotný, Brno 2002

Místo

Brno

ISBN

80-214-2217-3

Kniha

Socrates Workshop 2002 - Proceedings. Intensive Training Programme in Electronic System Design

Strany od

103

Strany počet

4

BibTex

@inproceedings{BUT5523,
  author="Milan {Recman}",
  title="Transistor Models Paramter Extraction",
  booktitle="Socrates Workshop 2002 - Proceedings. Intensive Training Programme in Electronic System Design",
  year="2002",
  pages="4",
  publisher="Ing. Z. Novotný, Brno
2002",
  address="Brno
",
  isbn="80-214-2217-3"
}