Detail publikačního výsledku

Noise as characterization for GaSb-based laser diodes prepared by molecular beam epitaxy

CHOBOLA, Z.; LUŇÁK, M.; VANĚK, J.; HULICIUS, E.

Originální název

Noise as characterization for GaSb-based laser diodes prepared by molecular beam epitaxy

Anglický název

Noise as characterization for GaSb-based laser diodes prepared by molecular beam epitaxy

Druh

Článek recenzovaný mimo WoS a Scopus

Originální abstrakt

A non-destructive method of relialiblity prediction for PN junction microelectronic devices is presented. Transport and noise characteristic of forward biased semiconductor lasers diodes GaSb based VCSE(Vertical Cavity Surface Emittint) lasers were prepared by Molecular Beam Epitaxy were measured in order to evaluate the new MBE technology.

Anglický abstrakt

A non-destructive method of relialiblity prediction for PN junction microelectronic devices is presented. Transport and noise characteristic of forward biased semiconductor lasers diodes GaSb based VCSE(Vertical Cavity Surface Emittint) lasers were prepared by Molecular Beam Epitaxy were measured in order to evaluate the new MBE technology.

Klíčová slova

Noise, GaSb, Laser

Klíčová slova v angličtině

Noise, GaSb, Laser

Autoři

CHOBOLA, Z.; LUŇÁK, M.; VANĚK, J.; HULICIUS, E.

Rok RIV

2011

Vydáno

12.04.2010

Nakladatel

SPIE

Místo

Brusel, Belgie

ISSN

0277-786X

Periodikum

Proceedings of SPIE

Svazek

2010

Číslo

7720

Stát

Spojené státy americké

Strany od

77202c-1

Strany do

77202c-7

Strany počet

7