Detail publikace

Noise as characterization for GaSb-based laser diodes prepared by molecular beam epitaxy

CHOBOLA, Z. LUŇÁK, M. VANĚK, J. HULICIUS, E.

Originální název

Noise as characterization for GaSb-based laser diodes prepared by molecular beam epitaxy

Anglický název

Noise as characterization for GaSb-based laser diodes prepared by molecular beam epitaxy

Jazyk

en

Originální abstrakt

A non-destructive method of relialiblity prediction for PN junction microelectronic devices is presented. Transport and noise characteristic of forward biased semiconductor lasers diodes GaSb based VCSE(Vertical Cavity Surface Emittint) lasers were prepared by Molecular Beam Epitaxy were measured in order to evaluate the new MBE technology.

Anglický abstrakt

A non-destructive method of relialiblity prediction for PN junction microelectronic devices is presented. Transport and noise characteristic of forward biased semiconductor lasers diodes GaSb based VCSE(Vertical Cavity Surface Emittint) lasers were prepared by Molecular Beam Epitaxy were measured in order to evaluate the new MBE technology.

Dokumenty

BibTex 


@article{BUT49763,
  author="Zdeněk {Chobola} and Miroslav {Luňák} and Jiří {Vaněk} and Eduard {Hulicius}",
  title="Noise as characterization for GaSb-based laser diodes prepared by molecular beam epitaxy",
  annote="A non-destructive method of relialiblity prediction for PN junction microelectronic devices is presented. Transport and noise characteristic of forward biased semiconductor lasers diodes GaSb based VCSE(Vertical Cavity Surface Emittint) lasers were prepared by Molecular Beam Epitaxy were measured in order to evaluate the new MBE technology.",
  address="SPIE",
  chapter="49763",
  institution="SPIE",
  journal="Proceedings of SPIE",
  number="7720",
  volume="2010",
  year="2010",
  month="april",
  pages="77202c-1--77202c-7",
  publisher="SPIE",
  type="journal article - other"
}