Detail publikace

Measurements and Theoretical Approximations of VA Characteristics MOSFETs

CHVÁTAL, M. ŠIKULA, J. SEDLÁKOVÁ, V. KNÁPEK, A.

Originální název

Measurements and Theoretical Approximations of VA Characteristics MOSFETs

Typ

článek v časopise - ostatní, Jost

Jazyk

angličtina

Originální abstrakt

Experiments were carried out for n-channel CMOS technology. Electron concentration in the channel decreases linearly from the source to the drain contact. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the channel and it has a minimum value near the source contact and increases with the distance from the source to the drain. It reaches maximum value near the drain electrode.

Klíčová slova

VA characteristic, MOSFET, electron density, diffusion current, drift current

Klíčová slova v angličtině

VA characteristic, MOSFET, electron density, diffusion current, drift current

Autoři

CHVÁTAL, M.; ŠIKULA, J.; SEDLÁKOVÁ, V.; KNÁPEK, A.

Rok RIV

2009

Vydáno

2. 11. 2009

Nakladatel

TYPOservis Holešov

Místo

Masarykova 650 76901 Holešov

ISSN

0447-6441

Periodikum

Jemná mechanika a optika

Ročník

54

Číslo

10

Stát

Česká republika

Strany od

278

Strany do

279

Strany počet

2

BibTex

@article{BUT49126,
  author="Miloš {Chvátal} and Josef {Šikula} and Vlasta {Sedláková} and Alexandr {Knápek}",
  title="Measurements and Theoretical Approximations of VA Characteristics MOSFETs",
  journal="Jemná mechanika a optika",
  year="2009",
  volume="54",
  number="10",
  pages="278--279",
  issn="0447-6441"
}