Detail publikačního výsledku

Modeling of Microwave Semiconductor Diodes

POKORNÝ, M.; RAIDA, Z.

Originální název

Modeling of Microwave Semiconductor Diodes

Anglický název

Modeling of Microwave Semiconductor Diodes

Druh

Článek recenzovaný mimo WoS a Scopus

Originální abstrakt

The paper deals with the multi-physical modeling of the microwave diodes. The electrostatic, drift-diffusion and thermal phenomena are considered in the physical model of the components. The basic semiconductor equations are summarized, and modeling issues are discussed. The simulation of the Gunn effect in transferred electron devices and carrier injection effect in PIN diodes are the aim of investigation and discussion. The analysis was performed in COMSOL Multiphysics computing environment using finite element method.

Anglický abstrakt

The paper deals with the multi-physical modeling of the microwave diodes. The electrostatic, drift-diffusion and thermal phenomena are considered in the physical model of the components. The basic semiconductor equations are summarized, and modeling issues are discussed. The simulation of the Gunn effect in transferred electron devices and carrier injection effect in PIN diodes are the aim of investigation and discussion. The analysis was performed in COMSOL Multiphysics computing environment using finite element method.

Klíčová slova

Gunn effect, carrier injection effect, PIN, FEM, COMSOL, drift-diffusion scheme, multi-physical model.

Klíčová slova v angličtině

Gunn effect, carrier injection effect, PIN, FEM, COMSOL, drift-diffusion scheme, multi-physical model.

Autoři

POKORNÝ, M.; RAIDA, Z.

Rok RIV

2011

Vydáno

01.09.2008

Nakladatel

Ústav radioelektroniky, VUT v Brně

Místo

Brno

ISSN

1210-2512

Periodikum

Radioengineering

Svazek

17

Číslo

3

Stát

Česká republika

Strany od

47

Strany do

52

Strany počet

6

BibTex

@article{BUT49090,
  author="Michal {Pokorný} and Zbyněk {Raida}",
  title="Modeling of Microwave Semiconductor Diodes",
  journal="Radioengineering",
  year="2008",
  volume="17",
  number="3",
  pages="47--52",
  issn="1210-2512"
}