High Domain Wall Velocity at Zero Magnetic Field Induced by Low Current Densities in Spin Valve Nanostripes

High Domain Wall Velocity at Zero Magnetic Field Induced by Low Current Densities in Spin Valve Nanostripes

Článek recenzovaný mimo WoS a Scopus

Current-induced magnetic domain wall motion at zero magnetic field is observed in the permalloy layer of a spin-valve-based nanostripe using photoemission electron microscopy. The domain wall movement is hampered by pinning sites, but in between them high domain wall velocities (exceeding 150 m/s) are obtained for current densities well below 10^12 A/m2, suggesting that these trilayer systems are promising for applications in domain wall devices in case of well controlled pinning positions. Vertical spin currents in these structures provide a potential explanation for the increase in domain wall velocity at low current densities.

Current-induced magnetic domain wall motion at zero magnetic field is observed in the permalloy layer of a spin-valve-based nanostripe using photoemission electron microscopy. The domain wall movement is hampered by pinning sites, but in between them high domain wall velocities (exceeding 150 m/s) are obtained for current densities well below 10^12 A/m2, suggesting that these trilayer systems are promising for applications in domain wall devices in case of well controlled pinning positions. Vertical spin currents in these structures provide a potential explanation for the increase in domain wall velocity at low current densities.

Domain Wall; Spin Valve, Motion

Domain Wall; Spin Valve, Motion

PIZZINI, S.; UHLÍŘ, V.; VOGEL, J.; ROUGEMAILLE, N.; LARIBI, S.; CROS, V.; JIMÉNEZ, E.; CAMARERO, J.; TIEG, C.; BONET, E.; BONFIM, M.; MATTANA, R.; DERANLOT, C.; PETROFF, F.; ULYSSE, C.; FAINI, G.; FERT, A.

2010

30.01.2009

1882-0778

Applied Physics Express

2

2

Japonsko

023003-1

023003-3

3