Detail publikačního výsledku

Morphology of cobalt layers on native SiO2 surfaces at elevated temperatures: formation of Co islands

ČECHAL, J.; LUKSCH, J.; KOŇÁKOVÁ, K.; URBÁNEK, M.; KOLÍBALOVÁ, E.; ŠIKOLA, T.

Originální název

Morphology of cobalt layers on native SiO2 surfaces at elevated temperatures: formation of Co islands

Anglický název

Morphology of cobalt layers on native SiO2 surfaces at elevated temperatures: formation of Co islands

Druh

Článek recenzovaný mimo WoS a Scopus

Originální abstrakt

The influence of deposition and annealing temperature on the morphology of ultra-thin cobalt layers on the native SiO2 surfaces has been investigated using AFM and XPS. To provide well defined conditions, the SiO2 layer was cleaned by thermal annealing at 560 - 580 C which caused desorption of the carbonaceous compounds. The deposition of Co on the native SiO2 at room temperature leads to the formation of smooth uniform layers. Upon annealing of these layers at temperatures above 260 - 320 C Co islands are formed. The further annealing at temperatures higher than 500 C causes a desorption of Co atoms from the oxide surface. No diffusion of Co atoms through the native SiO2 layer during the annealing has been observed up to the detection limit of XPS. The deposition at elevated temperatures in the range of 360 - 430 C leads to the formation of separate cobalt islands randomly arranged on the surface.

Anglický abstrakt

The influence of deposition and annealing temperature on the morphology of ultra-thin cobalt layers on the native SiO2 surfaces has been investigated using AFM and XPS. To provide well defined conditions, the SiO2 layer was cleaned by thermal annealing at 560 - 580 C which caused desorption of the carbonaceous compounds. The deposition of Co on the native SiO2 at room temperature leads to the formation of smooth uniform layers. Upon annealing of these layers at temperatures above 260 - 320 C Co islands are formed. The further annealing at temperatures higher than 500 C causes a desorption of Co atoms from the oxide surface. No diffusion of Co atoms through the native SiO2 layer during the annealing has been observed up to the detection limit of XPS. The deposition at elevated temperatures in the range of 360 - 430 C leads to the formation of separate cobalt islands randomly arranged on the surface.

Klíčová slova

Cobalt, Co; Silicon dioxide, SiO2; Islands, XPS, Photoelectron spectroscopy; SPM, AFM, MFM.

Klíčová slova v angličtině

Cobalt, Co; Silicon dioxide, SiO2; Islands, XPS, Photoelectron spectroscopy; SPM, AFM, MFM.

Autoři

ČECHAL, J.; LUKSCH, J.; KOŇÁKOVÁ, K.; URBÁNEK, M.; KOLÍBALOVÁ, E.; ŠIKOLA, T.

Rok RIV

2010

Vydáno

01.08.2008

ISSN

0039-6028

Periodikum

SURFACE SCIENCE

Svazek

602

Číslo

15

Stát

Nizozemsko

Strany od

2693

Strany do

2698

Strany počet

6

BibTex

@article{BUT47128,
  author="Jan {Čechal} and Jaroslav {Luksch} and Kateřina {Koňáková} and Michal {Urbánek} and Eva {Kolíbalová} and Tomáš {Šikola}",
  title="Morphology of cobalt layers on native SiO2 surfaces at elevated temperatures: formation of Co islands",
  journal="SURFACE SCIENCE",
  year="2008",
  volume="602",
  number="15",
  pages="2693--2698",
  issn="0039-6028"
}