Detail publikačního výsledku

Stability of hydrogen-terminated silicon surface under ambient atmosphere

KOLÍBAL, M.; ČECHAL, J.; BARTOŠÍK, M.; MACH, J.; ŠIKOLA, T.

Originální název

Stability of hydrogen-terminated silicon surface under ambient atmosphere

Anglický název

Stability of hydrogen-terminated silicon surface under ambient atmosphere

Druh

Článek recenzovaný mimo WoS a Scopus

Originální abstrakt

In this paper a comparative study of different wet-chemical etching procedures of vicinal Si(1 1 1) surface passivation is presented. The stability against oxidation under ambient atmosphere was studied by X-ray photoelectron spectroscopy and atomic force microscopy. The best results were achieved by the buffered HF etching and the final smoothing of the surface by hot (72 C) NH4F. The procedures consisting of a large number of etching steps were unsatisfactory, since the probability of contamination during each step was increasing. The passivated surface was stable against oxidation for at least 3 h under ambient atmosphere.

Anglický abstrakt

In this paper a comparative study of different wet-chemical etching procedures of vicinal Si(1 1 1) surface passivation is presented. The stability against oxidation under ambient atmosphere was studied by X-ray photoelectron spectroscopy and atomic force microscopy. The best results were achieved by the buffered HF etching and the final smoothing of the surface by hot (72 C) NH4F. The procedures consisting of a large number of etching steps were unsatisfactory, since the probability of contamination during each step was increasing. The passivated surface was stable against oxidation for at least 3 h under ambient atmosphere.

Klíčová slova

Silicon substrates; Wet-chemical pre-treatment; Etching; Oxidation; X-ray photoelectron spectroscopy

Klíčová slova v angličtině

Silicon substrates; Wet-chemical pre-treatment; Etching; Oxidation; X-ray photoelectron spectroscopy

Autoři

KOLÍBAL, M.; ČECHAL, J.; BARTOŠÍK, M.; MACH, J.; ŠIKOLA, T.

Rok RIV

2010

Vydáno

15.03.2010

ISSN

0169-4332

Periodikum

APPLIED SURFACE SCIENCE

Svazek

256

Číslo

11

Stát

Nizozemsko

Strany od

3423

Strany do

2426

Strany počet

4

BibTex

@article{BUT46912,
  author="Miroslav {Kolíbal} and Jan {Čechal} and Miroslav {Bartošík} and Jindřich {Mach} and Tomáš {Šikola}",
  title="Stability of hydrogen-terminated silicon surface under ambient atmosphere",
  journal="APPLIED SURFACE SCIENCE",
  year="2010",
  volume="256",
  number="11",
  pages="3423--2426",
  issn="0169-4332"
}