Detail publikačního výsledku

Atomic hydrogen induced gallium nanocluster formation on the Si(100) surface

MACH, J.; ČECHAL, J.; KOLÍBAL, M.; POTOČEK, M.; ŠIKOLA, T.

Originální název

Atomic hydrogen induced gallium nanocluster formation on the Si(100) surface

Anglický název

Atomic hydrogen induced gallium nanocluster formation on the Si(100) surface

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Článek recenzovaný mimo WoS a Scopus

Originální abstrakt

The influence of atomic hydrogen on the Si(100) substrate with submonolayer gallium surface phases - (2x3), (2x2) and (8x1) - as well as the deposition of gallium on monohydride terminated Si(100)-(2x1)-H surface were studied by synchrotron radiation photoelectron spectroscopy (SR-PES) and low energy electron diffraction (LEED) and compared with similar metal/Si systems. It was found that gallium deposition on the Si(100)-(2x1)-H surface at elevated temperature (400 C) leads to a complete hydrogen desorption and formation of the same gallium surface phases as on the bare Si(100)-(2x1). Exposing the Si(100) substrate with (2x3)-Ga and (2x2)-Ga surface phases to atomic hydrogen results in the formation of gallium nanoclusters, surrounded by the Si(100)-(2x1)-H surface. These clusters have more than 2 monolayers in height and cover approximately 20 - 26 % of surface, depending on the initial coverage. The results indicate that the cluster size and density may be controlled by initial Ga coverage and possibly by temperature.

Anglický abstrakt

The influence of atomic hydrogen on the Si(100) substrate with submonolayer gallium surface phases - (2x3), (2x2) and (8x1) - as well as the deposition of gallium on monohydride terminated Si(100)-(2x1)-H surface were studied by synchrotron radiation photoelectron spectroscopy (SR-PES) and low energy electron diffraction (LEED) and compared with similar metal/Si systems. It was found that gallium deposition on the Si(100)-(2x1)-H surface at elevated temperature (400 C) leads to a complete hydrogen desorption and formation of the same gallium surface phases as on the bare Si(100)-(2x1). Exposing the Si(100) substrate with (2x3)-Ga and (2x2)-Ga surface phases to atomic hydrogen results in the formation of gallium nanoclusters, surrounded by the Si(100)-(2x1)-H surface. These clusters have more than 2 monolayers in height and cover approximately 20 - 26 % of surface, depending on the initial coverage. The results indicate that the cluster size and density may be controlled by initial Ga coverage and possibly by temperature.

Klíčová slova

Gallium, Ga; Silicon, Si(100); Hydrogen; Surface structure; Nanoclusters; Low energy electron diffraction (LEED); Synchrotron radiation photoelectron spectroscopy (SR-PES); Photoemission

Klíčová slova v angličtině

Gallium, Ga; Silicon, Si(100); Hydrogen; Surface structure; Nanoclusters; Low energy electron diffraction (LEED); Synchrotron radiation photoelectron spectroscopy (SR-PES); Photoemission

Autoři

MACH, J.; ČECHAL, J.; KOLÍBAL, M.; POTOČEK, M.; ŠIKOLA, T.

Rok RIV

2010

Vydáno

15.05.2008

ISSN

0039-6028

Periodikum

SURFACE SCIENCE

Svazek

602

Číslo

10

Stát

Nizozemsko

Strany od

1898

Strany do

1902

Strany počet

5

BibTex

@article{BUT46749,
  author="Jindřich {Mach} and Jan {Čechal} and Miroslav {Kolíbal} and Michal {Potoček} and Tomáš {Šikola}",
  title="Atomic hydrogen induced gallium nanocluster formation on the Si(100) surface",
  journal="SURFACE SCIENCE",
  year="2008",
  volume="602",
  number="10",
  pages="1898--1902",
  issn="0039-6028"
}