Detail publikačního výsledku

Noise and I-V Characteristic as Characterization Tools for GaSb base Laser Diodes

CHOBOLA, Z.; VANĚK, J.; KAZELLE, J.

Originální název

Noise and I-V Characteristic as Characterization Tools for GaSb base Laser Diodes

Anglický název

Noise and I-V Characteristic as Characterization Tools for GaSb base Laser Diodes

Druh

Článek recenzovaný mimo WoS a Scopus

Originální abstrakt

Transport and noise characteristic of forward biased 2.3 microm CW GaSb laser diodes were measured in order to evaluate new technology. From the measurement results it follows hat noise spectral density related to defect is of 1/f type and its magnitude was found to be proportional to the squere of DC forwrd current at low infection levels.

Anglický abstrakt

Transport and noise characteristic of forward biased 2.3 microm CW GaSb laser diodes were measured in order to evaluate new technology. From the measurement results it follows hat noise spectral density related to defect is of 1/f type and its magnitude was found to be proportional to the squere of DC forwrd current at low infection levels.

Klíčová slova v angličtině

Noise, Laser Diodes

Autoři

CHOBOLA, Z.; VANĚK, J.; KAZELLE, J.

Vydáno

19.09.2005

Místo

Spain

ISSN

0094-243X

Periodikum

AIP conference proceedings

Svazek

2005

Číslo

780

Stát

Spojené státy americké

Strany od

721

Strany počet

4

BibTex

@article{BUT45527,
  author="Zdeněk {Chobola} and Jiří {Vaněk} and Jiří {Kazelle}",
  title="Noise and I-V Characteristic as Characterization Tools for GaSb base Laser Diodes",
  journal="AIP conference proceedings",
  year="2005",
  volume="2005",
  number="780",
  pages="4",
  issn="0094-243X"
}