Detail publikace

Noise and I-V Characteristic as Characterization Tools for GaSb base Laser Diodes

CHOBOLA, Z. VANĚK, J. KAZELLE, J.

Originální název

Noise and I-V Characteristic as Characterization Tools for GaSb base Laser Diodes

Anglický název

Noise and I-V Characteristic as Characterization Tools for GaSb base Laser Diodes

Jazyk

en

Originální abstrakt

Transport and noise characteristic of forward biased 2.3 microm CW GaSb laser diodes were measured in order to evaluate new technology. From the measurement results it follows hat noise spectral density related to defect is of 1/f type and its magnitude was found to be proportional to the squere of DC forwrd current at low infection levels.

Anglický abstrakt

Transport and noise characteristic of forward biased 2.3 microm CW GaSb laser diodes were measured in order to evaluate new technology. From the measurement results it follows hat noise spectral density related to defect is of 1/f type and its magnitude was found to be proportional to the squere of DC forwrd current at low infection levels.

Dokumenty

BibTex 


@article{BUT45527,
  author="Zdeněk {Chobola} and Jiří {Vaněk} and Jiří {Kazelle}",
  title="Noise and I-V Characteristic as Characterization Tools for GaSb base Laser Diodes",
  annote="Transport and noise characteristic of forward biased 2.3 microm CW GaSb laser diodes were measured in order to evaluate new technology. From the measurement results it follows hat noise spectral density related to defect is of 1/f type and its magnitude was found to be proportional to the squere of DC forwrd current at low infection levels.",
  chapter="45527",
  number="780",
  volume="2005",
  year="2005",
  month="september",
  pages="721",
  type="journal article - other"
}