Detail publikačního výsledku

Using a Porous Alumina Film as a Mask for Formation of Ordered Nanostructures by Deposition Technique

HRDÝ, R.; HUBÁLEK, J.

Originální název

Using a Porous Alumina Film as a Mask for Formation of Ordered Nanostructures by Deposition Technique

Anglický název

Using a Porous Alumina Film as a Mask for Formation of Ordered Nanostructures by Deposition Technique

Druh

Článek recenzovaný mimo WoS a Scopus

Originální abstrakt

The porous alumina attracts attention because of its self-ordered hexagonal structure. It can be used as a template nanosize structure, for many devices such as magnetic, electronic and optoelectronic. The aim of this method is preparation of the mask for electrodepositing nanowires directly on Si substrate. The presented technique without utilization of high-resolution electron-beam lithographs belongs to low-cost technology in the microelectronic industry. Anodic alumina has been prepared in several electrolytes by the anodization process and the characteristics of pore structures have been studied in different anodizing conditions. The thickness of aluminum film for anodization was 1-2 um. The two methods for deposition of aluminum thin film on Si substrate are thermal evaporating and sputtering. The prepared alumina structures have 15-30 nm pore diameters and 30-110 nm interpore distances. The anodization of thin alumina film deposited on Si substrate is a complicated process in comparison with the anodization of aluminum sheet but the unique properties of this method are stability of the prepared structure and simple manipulation in other operations.

Anglický abstrakt

The porous alumina attracts attention because of its self-ordered hexagonal structure. It can be used as a template nanosize structure, for many devices such as magnetic, electronic and optoelectronic. The aim of this method is preparation of the mask for electrodepositing nanowires directly on Si substrate. The presented technique without utilization of high-resolution electron-beam lithographs belongs to low-cost technology in the microelectronic industry. Anodic alumina has been prepared in several electrolytes by the anodization process and the characteristics of pore structures have been studied in different anodizing conditions. The thickness of aluminum film for anodization was 1-2 um. The two methods for deposition of aluminum thin film on Si substrate are thermal evaporating and sputtering. The prepared alumina structures have 15-30 nm pore diameters and 30-110 nm interpore distances. The anodization of thin alumina film deposited on Si substrate is a complicated process in comparison with the anodization of aluminum sheet but the unique properties of this method are stability of the prepared structure and simple manipulation in other operations.

Klíčová slova

pore alumina, anodization, sputtered, nanocrystal

Klíčová slova v angličtině

pore alumina, anodization, sputtered, nanocrystal

Autoři

HRDÝ, R.; HUBÁLEK, J.

Vydáno

01.02.2007

Nakladatel

Hutnická fakulta Technickej univerzity

Místo

Košice

ISSN

1335-1532

Periodikum

Acta Metallurgica Slovaca

Svazek

13

Číslo

2

Stát

Slovenská republika

Strany od

155

Strany do

158

Strany počet

4

BibTex

@article{BUT44513,
  author="Radim {Hrdý} and Jaromír {Hubálek}",
  title="Using a Porous Alumina Film as a Mask for Formation of Ordered Nanostructures by Deposition Technique",
  journal="Acta Metallurgica Slovaca",
  year="2007",
  volume="13",
  number="2",
  pages="155--158",
  issn="1335-1532"
}