Quantitative analysis of ultra thin layer growth by time-of-flight low energy ion scattering

Quantitative analysis of ultra thin layer growth by time-of-flight low energy ion scattering

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Time of flight low energy ion scattering is used to quantitatively characterize the growth mode of Au deposited on B. Information on the filling factor (surface area coverage) is deduced from the yield of backscattered ions and the spectrum height of scattered neutrals. From the variation of the filling factor with the nominal Au thickness, cluster growth is deduced. Information on the average cluster height is obtained from the energy distribution of scattered neutrals and the comparison with computer simulation. Finally, an estimate of the aspect ratios is obtained for the clusters from the filling factor and the cluster height.

Time of flight low energy ion scattering is used to quantitatively characterize the growth mode of Au deposited on B. Information on the filling factor (surface area coverage) is deduced from the yield of backscattered ions and the spectrum height of scattered neutrals. From the variation of the filling factor with the nominal Au thickness, cluster growth is deduced. Information on the average cluster height is obtained from the energy distribution of scattered neutrals and the comparison with computer simulation. Finally, an estimate of the aspect ratios is obtained for the clusters from the filling factor and the cluster height.

Low energy ion scattering, LEIS; Time-of-flight, ToF; Quantitative analysis

Low energy ion scattering, LEIS; Time-of-flight, ToF; Quantitative analysis

PRIMETZHOFER, D.; MARKIN, S.; ZEPPENFELD, P.; BAUER, P.; PRŮŠA, S.; KOLÍBAL, M.; ŠIKOLA, T.

2010

11.01.2008

0003-6951

APPLIED PHYSICS LETTERS

92

1

Spojené státy americké

011929-1

011929-3

3