Detail publikačního výsledku

Dopant Contrast in Semiconductors as Interpretation Challenge at Imaging by Electrons.

FRANK, L.; MIKA, F.; HOVORKA, M.; VALDAITSEV, D.; SCHÖNHENSE, G.; MÜLLEROVÁ, I.

Originální název

Dopant Contrast in Semiconductors as Interpretation Challenge at Imaging by Electrons.

Anglický název

Dopant Contrast in Semiconductors as Interpretation Challenge at Imaging by Electrons.

Druh

Článek recenzovaný mimo WoS a Scopus

Originální abstrakt

Mechanisms responsible for the contrast between diferently doped areas in semiconductors, whych is observed in electron micrographs, is discussed as regards the key factors determining the sign and magnitude of the contrast. Experimental data optained by means of the SEM, SLEEM, PEM are presented.

Anglický abstrakt

Mechanisms responsible for the contrast between diferently doped areas in semiconductors, whych is observed in electron micrographs, is discussed as regards the key factors determining the sign and magnitude of the contrast. Experimental data optained by means of the SEM, SLEEM, PEM are presented.

Klíčová slova v angličtině

SLEEM; dopant contrast; SEM; PEEM

Autoři

FRANK, L.; MIKA, F.; HOVORKA, M.; VALDAITSEV, D.; SCHÖNHENSE, G.; MÜLLEROVÁ, I.

Vydáno

25.04.2007

Svazek

48

Číslo

5

Strany od

936

Strany počet

4

BibTex

@article{BUT43452,
  author="Luděk {Frank} and Filip {Mika} and Miloš {Hovorka} and D. {Valdaitsev} and Gerd {Schönhense} and Ilona {Müllerová}",
  title="Dopant Contrast in Semiconductors as Interpretation Challenge at Imaging by Electrons.",
  year="2007",
  volume="48",
  number="5",
  pages="4"
}