Local optical phenomena in InAs/GaAs heterostructures with quantum dots and artificial molecules

článek v časopise ve Web of Science, Jimp

angličtina

Due to a long electron lifetime at the excited levels of quantum dot (QDs), the use of QDs as a basis for new optoelectronic devices is very promising. Inter- and intraband light absorption studies in QDs are useful not only for investigations of photodetectors but they also are the necessary condition of the development of new types of mid-infrared lasers. In the paper the preliminary results of experimental and theoretical studies of the local optical phenomena in n- and p-doped InAs/GaAs QDs and artificial molecules formed by pairs of QDs are presented. The peculiarities in local photoluminescence spectra can be associated with absorption peaks connected with intraband interlevel transitions of electrons and holes between the ground and excited states.

optical phenomena, SNOM, InAs/GaAs, quantum dot, artificial molecule, photoluminescence

TOMÁNEK, P.; GRMELA, L.

2005

30. 8. 2005

Korean Physical Society

Seoul, South Korea

0374-4884

Journal of the Korean Physical Society

47

96

Korejská republika

S162

S165

4