Detail publikačního výsledku

Local photoluminescence measurements of semiconductor surface defects

TOMÁNEK, P.; BENEŠOVÁ, M.; DOBIS, P.; BRÜSTLOVÁ, J.; UHDEOVÁ, N.

Originální název

Local photoluminescence measurements of semiconductor surface defects

Anglický název

Local photoluminescence measurements of semiconductor surface defects

Druh

Článek WoS

Originální abstrakt

The relevance of scanning near-field scanning optical microscopy (SNOM) for optical characterization of semiconductors with quantum dots is presented. The SNOM technique and some of its properties appropriate to real-time in-situ measurements are evaluated. Several optical characterization methods - widely used in the far-field, including reflectance, reflectance-difference spectroscopy, and carrier lifetime, are estimated for their use with SNOM. Experimental data are included for some of these methods. Numerous standard optical characterization methods can be coupled with SNOM to provide higher spatial resolution. The applicability of SNOM as a real-time in-situ probe shares some of the problems of other local probe methods, but offers enough new capabilities to assure its application.

Anglický abstrakt

The relevance of scanning near-field scanning optical microscopy (SNOM) for optical characterization of semiconductors with quantum dots is presented. The SNOM technique and some of its properties appropriate to real-time in-situ measurements are evaluated. Several optical characterization methods - widely used in the far-field, including reflectance, reflectance-difference spectroscopy, and carrier lifetime, are estimated for their use with SNOM. Experimental data are included for some of these methods. Numerous standard optical characterization methods can be coupled with SNOM to provide higher spatial resolution. The applicability of SNOM as a real-time in-situ probe shares some of the problems of other local probe methods, but offers enough new capabilities to assure its application.

Klíčová slova

Spectroscopy, near field optics, SNOM, local photoluminescence, semiconductor, surface, defects

Klíčová slova v angličtině

Spectroscopy, near field optics, SNOM, local photoluminescence, semiconductor, surface, defects

Autoři

TOMÁNEK, P.; BENEŠOVÁ, M.; DOBIS, P.; BRÜSTLOVÁ, J.; UHDEOVÁ, N.

Vydáno

10.07.2004

Nakladatel

SPIE

Místo

Bellingham, USA

ISSN

0277-786X

Periodikum

Proceedings of SPIE

Číslo

5477

Stát

Spojené státy americké

Strany od

131

Strany do

137

Strany počet

7

BibTex

@article{BUT42085,
  author="Pavel {Tománek} and Markéta {Benešová} and Pavel {Dobis} and Jitka {Brüstlová} and Naděžda {Uhdeová}",
  title="Local photoluminescence measurements of semiconductor surface defects",
  journal="Proceedings of SPIE",
  year="2004",
  number="5477",
  pages="131--137",
  issn="0277-786X"
}