Detail publikačního výsledku

Local spectroscopy by scanning near-field optical microscopy

LÉTAL, P., TOMÁNEK, P., DOBIS, P., BRÜSTLOVÁ, J., GRMELA, L.

Originální název

Local spectroscopy by scanning near-field optical microscopy

Anglický název

Local spectroscopy by scanning near-field optical microscopy

Druh

Článek recenzovaný mimo WoS a Scopus

Originální abstrakt

The photoluminescence (PL) spectroscopy has for a long time been established as a very efficient, nondestructive technique for the evaluation of semiconductor materials and heterostructures. At room temperature, the band-gap-energy of ternary and quaternary epitaxial layers can be determined from the position of the PL peak, and the half-width of the PL curve is correlated with the free-carrier concentration. Both these parameters are important for the preparation of new epitaxial layers and structures for optoelectronic devices and applications. The comparison of PL obtained in the Near-field optical region and corresponding electroluminescent spectra in the Far-field from diodes based on investigated material helps to analyze the relative contributions - of the material luminescence (PL), and - the wave-guiding properties of the heterostructure, to the spectrum emitted from the diode edge.

Anglický abstrakt

The photoluminescence (PL) spectroscopy has for a long time been established as a very efficient, nondestructive technique for the evaluation of semiconductor materials and heterostructures. At room temperature, the band-gap-energy of ternary and quaternary epitaxial layers can be determined from the position of the PL peak, and the half-width of the PL curve is correlated with the free-carrier concentration. Both these parameters are important for the preparation of new epitaxial layers and structures for optoelectronic devices and applications. The comparison of PL obtained in the Near-field optical region and corresponding electroluminescent spectra in the Far-field from diodes based on investigated material helps to analyze the relative contributions - of the material luminescence (PL), and - the wave-guiding properties of the heterostructure, to the spectrum emitted from the diode edge.

Klíčová slova

photoluminescence, local characteristics, SNOM,

Klíčová slova v angličtině

photoluminescence, local characteristics, SNOM,

Autoři

LÉTAL, P., TOMÁNEK, P., DOBIS, P., BRÜSTLOVÁ, J., GRMELA, L.

Vydáno

02.05.1998

ISSN

1210-2717

Periodikum

Inženýrská mechanika - Engineering Mechanics

Svazek

5

Číslo

3

Stát

Česká republika

Strany od

215

Strany počet

4

Plný text v Digitální knihovně

http://hdl.handle.net/

BibTex

@article{BUT41424,
  author="Petr {Létal} and Pavel {Tománek} and Pavel {Dobis} and Jitka {Brüstlová} and Lubomír {Grmela}",
  title="Local spectroscopy by scanning near-field optical microscopy",
  journal="Inženýrská mechanika - Engineering Mechanics",
  year="1998",
  volume="5",
  number="3",
  pages="4",
  issn="1210-2717"
}