Detail publikačního výsledku

Low Frequency Noise of Tantalum Capacitors

ŠIKULA, J.; HLÁVKA, J.; PAVELKA, J.; SEDLÁKOVÁ, V.; GRMELA, L.; TACANO, M.; HASHIGUCHI, S.

Originální název

Low Frequency Noise of Tantalum Capacitors

Anglický název

Low Frequency Noise of Tantalum Capacitors

Druh

Článek recenzovaný mimo WoS a Scopus

Originální abstrakt

A low frequency noise and charge carriers transport mechanism analysis was performed on tantalum capacitors in order to characterise their quality and reliability. The model of Ta-Ta2O5-MnO2 MIS structure was used to give physical interpretation of VA characteristic both in normal and reverse modes. The self-healing process based on the high temperature MnO2-Mn2O3 transformation was studied and its kinetic determined on the basis of noise spectral density changes. The correlation between leakage current and noise spectral density was evaluated and noise reliability indicator was suggested. In normal mode the noise spectral density at rated voltage increases with second power of current and it varies within two decades for given leakage current value. In reverse mode there is only weak correlation and for given applied voltage, the leakage current for all ensemble varies only by one order, whereas the noise spectral density of the same samples spread in five orders.

Anglický abstrakt

A low frequency noise and charge carriers transport mechanism analysis was performed on tantalum capacitors in order to characterise their quality and reliability. The model of Ta-Ta2O5-MnO2 MIS structure was used to give physical interpretation of VA characteristic both in normal and reverse modes. The self-healing process based on the high temperature MnO2-Mn2O3 transformation was studied and its kinetic determined on the basis of noise spectral density changes. The correlation between leakage current and noise spectral density was evaluated and noise reliability indicator was suggested. In normal mode the noise spectral density at rated voltage increases with second power of current and it varies within two decades for given leakage current value. In reverse mode there is only weak correlation and for given applied voltage, the leakage current for all ensemble varies only by one order, whereas the noise spectral density of the same samples spread in five orders.

Klíčová slova

Noise in tantalum capacitors; Tantalum capacitors

Klíčová slova v angličtině

Noise in tantalum capacitors; Tantalum capacitors

Autoři

ŠIKULA, J.; HLÁVKA, J.; PAVELKA, J.; SEDLÁKOVÁ, V.; GRMELA, L.; TACANO, M.; HASHIGUCHI, S.

Vydáno

01.01.2002

ISSN

0882-7516

Periodikum

Active and Passive Electronic Components

Svazek

25

Číslo

2

Stát

Spojené státy americké

Strany od

161

Strany počet

7

BibTex

@article{BUT40748,
  author="Josef {Šikula} and Jan {Hlávka} and Jan {Pavelka} and Vlasta {Sedláková} and Lubomír {Grmela} and Munecazu {Tacano} and Sumihisa {Hashiguchi}",
  title="Low Frequency Noise of Tantalum Capacitors",
  journal="Active and Passive Electronic Components",
  year="2002",
  volume="25",
  number="2",
  pages="7",
  issn="0882-7516"
}