Detail publikačního výsledku

Low-temperature growth of SiCAlN films of high hardness on Si(111) substrates

ROUČKA, R., TOLLE, J., CROZIER, P., TSONG, I., KOUVETAKIS, J., SMITH, D.

Originální název

Low-temperature growth of SiCAlN films of high hardness on Si(111) substrates

Anglický název

Low-temperature growth of SiCAlN films of high hardness on Si(111) substrates

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Článek recenzovaný mimo WoS a Scopus

Originální abstrakt

Thin films of metastable SiCAlN solid solution were deposited on Si(111) substrates at 550-750 degreesC, considerably below the miscibility gap of SiC and AlN phases at 1900 degreesC. Our low-temperature growth was based upon thermally activated reactions between a unimolecular precursor H3SiCN and Al atoms from an evaporative cell in a molecular-beam-epitaxy chamber. Characterization of deposited films by spectroscopic and microscopic techniques yielded near-stoichiometric composition throughout the columnar wurtzite structure with lattice parameters very close to those of 2H-SiC and hexagonal AlN. An average hardness of 25 GPa was measured for the SiCAlN films, comparable to that measured for sapphire. (C) 2001 American Institute of Physics.

Anglický abstrakt

Thin films of metastable SiCAlN solid solution were deposited on Si(111) substrates at 550-750 degreesC, considerably below the miscibility gap of SiC and AlN phases at 1900 degreesC. Our low-temperature growth was based upon thermally activated reactions between a unimolecular precursor H3SiCN and Al atoms from an evaporative cell in a molecular-beam-epitaxy chamber. Characterization of deposited films by spectroscopic and microscopic techniques yielded near-stoichiometric composition throughout the columnar wurtzite structure with lattice parameters very close to those of 2H-SiC and hexagonal AlN. An average hardness of 25 GPa was measured for the SiCAlN films, comparable to that measured for sapphire. (C) 2001 American Institute of Physics.

Klíčová slova v angličtině

MOLECULAR-BEAM EPITAXY, SILICON-CARBIDE, SOLID-SOLUTIONS, ALUMINUM NITRIDE, DEPOSITION, SYSTEM, ALN, AIN

Autoři

ROUČKA, R., TOLLE, J., CROZIER, P., TSONG, I., KOUVETAKIS, J., SMITH, D.

Vydáno

23.10.2002

ISSN

0003-6951

Periodikum

APPLIED PHYSICS LETTERS

Svazek

79

Číslo

18

Stát

Spojené státy americké

Strany od

2880

Strany počet

3

BibTex

@article{BUT40592,
  author="Radek {Roučka} and J. {Tolle} and P. {Crozier} and I. {Tsong} and J. {Kouvetakis} and D. J. {Smith}",
  title="Low-temperature growth of SiCAlN films of high hardness on Si(111) substrates",
  journal="APPLIED PHYSICS LETTERS",
  year="2002",
  volume="79",
  number="18",
  pages="3",
  issn="0003-6951"
}