Detail publikačního výsledku

POWERFUL TRACTION BATTERY CHARGER USING NEW SEMICONDUCTOR DEVICES

KUZDAS, J.

Originální název

POWERFUL TRACTION BATTERY CHARGER USING NEW SEMICONDUCTOR DEVICES

Anglický název

POWERFUL TRACTION BATTERY CHARGER USING NEW SEMICONDUCTOR DEVICES

Druh

Stať ve sborníku v databázi WoS či Scopus

Originální abstrakt

This article deals with the concept of the new powerful traction battery charger for electric vehicles. Because of the required minimum possible size and weight, while keeping the simplicity and reliability of the equipment, it was not easy to choose an appropriate design. There are also described problems occurring in the selected concepts and their subsequent solutions. This concept was implemented as a functional pattern, and then measurements were taken to verify the validation and functionality of the equipment.

Anglický abstrakt

This article deals with the concept of the new powerful traction battery charger for electric vehicles. Because of the required minimum possible size and weight, while keeping the simplicity and reliability of the equipment, it was not easy to choose an appropriate design. There are also described problems occurring in the selected concepts and their subsequent solutions. This concept was implemented as a functional pattern, and then measurements were taken to verify the validation and functionality of the equipment.

Klíčová slova

Diode SiC, tranzistor Cool-MOS, powerful charger.

Klíčová slova v angličtině

Diode SiC, tranzistor Cool-MOS, powerful charger.

Autoři

KUZDAS, J.

Rok RIV

2011

Vydáno

28.04.2011

Nakladatel

VUT v Brně, FEKT

Místo

Brno

ISBN

978-80-214-4273-3

Kniha

Proceedings of the 17th Confertence STUDENT EEICT 2010 Volume 3

Strany od

269

Strany do

273

Strany počet

5

Plný text v Digitální knihovně

http://hdl.handle.net/

BibTex

@inproceedings{BUT37117,
  author="Jan {Kuzdas}",
  title="POWERFUL TRACTION BATTERY CHARGER USING NEW SEMICONDUCTOR DEVICES",
  booktitle="Proceedings of the 17th Confertence STUDENT EEICT 2010 Volume 3",
  year="2011",
  number="1",
  pages="269--273",
  publisher="VUT v Brně, FEKT",
  address="Brno",
  isbn="978-80-214-4273-3"
}