Detail publikace

Noise Characterization Setup for Organic Field Effect Transistors

KRČÁL, O. KOKTAVÝ, P. KNÁPEK, A.

Originální název

Noise Characterization Setup for Organic Field Effect Transistors

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

In general organic field effect transistors (FETs) are thin film transistors of a MISFET (metal-insulator-semiconductor) geometry. The transistor may include an inorganic substrate (which may also serve as Gate electrode), insulator or electrodes. As there has not been many articles published yet related to the area of noise analysis of organic semiconductors, following information are crucial basement for the future noise investigation and provide knowledge to prepare and set up the low noise unit for organic structure measurement, which can be used for either organic unipole device or organic dipole device with one common electrode characterization

Klíčová slova

Organic semiconductor, OFET, noise characterization, pentacene

Autoři

KRČÁL, O.; KOKTAVÝ, P.; KNÁPEK, A.

Rok RIV

2010

Vydáno

1. 9. 2010

Nakladatel

Brno University of Technology

Místo

Brno

ISBN

978-80-214-4138-5

Kniha

IMAPS CS International Conference 2010 - Proceedings

Strany od

185

Strany do

189

Strany počet

5

BibTex

@inproceedings{BUT34628,
  author="Ondřej {Krčál} and Pavel {Koktavý} and Alexandr {Knápek}",
  title="Noise Characterization Setup for Organic Field Effect Transistors",
  booktitle="IMAPS CS International Conference 2010 - Proceedings",
  year="2010",
  pages="185--189",
  publisher="Brno University of Technology",
  address="Brno",
  isbn="978-80-214-4138-5"
}