Detail publikačního výsledku

In situ measurements of surface homogeneity of optical parameters of weakly absorbing thin films

SPOUSTA, J., URBÁNEK, M., ŠIKOLA, T., NEBOJSA, A., CHMELÍK, R., ZLÁMAL, J., JIRUŠE, J.

Originální název

In situ measurements of surface homogeneity of optical parameters of weakly absorbing thin films

Anglický název

In situ measurements of surface homogeneity of optical parameters of weakly absorbing thin films

Druh

Stať ve sborníku v databázi WoS či Scopus

Originální abstrakt

In the paper the instrument working on the principles of spectral reflectivity and designed in our group for in situ monitoring of surface homogeneity of optical parameters of weakly absorbing thin films was tested in a series of ex- and in situ experiments. The tests confirmed that it is a convenient tool for the in situ quasi-real time monitoring of surface homogeneity of thicknesses and optical parameters of small area thin films (up to 1 cm2) during their etching and growth. By this method a homogeneous growth of an SiO2 film with an average growth rate of 103 nm/hour in one pilot point during the deposition by ion beam sputtering of a quartz target was monitored in situ. On the other hand, the ion beam etching rate of the thermal SiO2 film was lower than 3.3 nm/min and the enhanced roughness of the etched film in comparison to the initial one was observed.

Anglický abstrakt

In the paper the instrument working on the principles of spectral reflectivity and designed in our group for in situ monitoring of surface homogeneity of optical parameters of weakly absorbing thin films was tested in a series of ex- and in situ experiments. The tests confirmed that it is a convenient tool for the in situ quasi-real time monitoring of surface homogeneity of thicknesses and optical parameters of small area thin films (up to 1 cm2) during their etching and growth. By this method a homogeneous growth of an SiO2 film with an average growth rate of 103 nm/hour in one pilot point during the deposition by ion beam sputtering of a quartz target was monitored in situ. On the other hand, the ion beam etching rate of the thermal SiO2 film was lower than 3.3 nm/min and the enhanced roughness of the etched film in comparison to the initial one was observed.

Klíčová slova v angličtině

spectroscopic reflectometry, surface homogeneity, in situ monitoring

Autoři

SPOUSTA, J., URBÁNEK, M., ŠIKOLA, T., NEBOJSA, A., CHMELÍK, R., ZLÁMAL, J., JIRUŠE, J.

Vydáno

30.09.2001

Nakladatel

P. Marcus, A. Galtayries, N. Frémy

Místo

Avignon, France

Kniha

9th European Conference on Applications of Surface and Interface Analysis (ECASIA'01) Book of Abstracts

Strany od

295

Strany počet

1

BibTex

@inproceedings{BUT3321,
  author="Jiří {Spousta} and Michal {Urbánek} and Tomáš {Šikola} and Alois {Nebojsa} and Radim {Chmelík} and Jakub {Zlámal} and Jaroslav {Jiruše}",
  title="In situ measurements of surface homogeneity of optical parameters of weakly absorbing thin films",
  booktitle="9th European Conference on Applications of Surface and Interface Analysis (ECASIA'01) Book of Abstracts",
  year="2001",
  pages="1",
  publisher="P. Marcus, A. Galtayries, N. Frémy",
  address="Avignon, France"
}