Detail publikačního výsledku

RTS Noise and quantum transitions in submicron MOSFETs

ŠIKULA, J.; PAVELKA, J.; SEDLÁKOVÁ, V.; HLÁVKA, J.; TACANO, M.; TOITA, M.

Originální název

RTS Noise and quantum transitions in submicron MOSFETs

Anglický název

RTS Noise and quantum transitions in submicron MOSFETs

Druh

Stať ve sborníku v databázi WoS či Scopus

Originální abstrakt

We compare two models of charge carrier capture and emission in silicon MOSFET, which is a source of RTS noise. In the SiO2 gate insulating layer and its interface with Si channel there is a high number of oxygen vacancies, creating localised states and traps. Electron exchange between channel and traps within several nanometers distance is given by tunnelling processes and leads to generation of 1/f noise. Two possible mechanisms of electron tunnelling are discussed and theoretical results are compared to experimental dependence of capture and emission parameters as a function of gate and drain voltage (electric field intensity) and temperature.

Anglický abstrakt

We compare two models of charge carrier capture and emission in silicon MOSFET, which is a source of RTS noise. In the SiO2 gate insulating layer and its interface with Si channel there is a high number of oxygen vacancies, creating localised states and traps. Electron exchange between channel and traps within several nanometers distance is given by tunnelling processes and leads to generation of 1/f noise. Two possible mechanisms of electron tunnelling are discussed and theoretical results are compared to experimental dependence of capture and emission parameters as a function of gate and drain voltage (electric field intensity) and temperature.

Klíčová slova

RTS noise, 1/f noise, MOSFET

Klíčová slova v angličtině

RTS noise, 1/f noise, MOSFET

Autoři

ŠIKULA, J.; PAVELKA, J.; SEDLÁKOVÁ, V.; HLÁVKA, J.; TACANO, M.; TOITA, M.

Vydáno

15.11.2007

Nakladatel

VUT

Místo

Brno

ISBN

978-80-7355-078-3

Kniha

New Trends in Physics

Strany od

138

Strany do

141

Strany počet

4

BibTex

@inproceedings{BUT27881,
  author="Josef {Šikula} and Jan {Pavelka} and Vlasta {Sedláková} and Jan {Hlávka} and Munecazu {Tacano} and Masato {Toita}",
  title="RTS Noise and quantum transitions in submicron MOSFETs",
  booktitle="New Trends in Physics",
  year="2007",
  pages="138--141",
  publisher="VUT",
  address="Brno",
  isbn="978-80-7355-078-3"
}