Detail publikačního výsledku

Charge Carriers Transport and Noise in Niobium Oxide and Tantalum Capacitors

ŠIKULA, J.; SEDLÁKOVÁ, V.; SITA, Z.

Originální název

Charge Carriers Transport and Noise in Niobium Oxide and Tantalum Capacitors

Anglický název

Charge Carriers Transport and Noise in Niobium Oxide and Tantalum Capacitors

Druh

Stať ve sborníku v databázi WoS či Scopus

Originální abstrakt

The NbO and Ta capacitor active region quality assessment is based on the evaluation of VA and noise characteristics and theirs temperature dependences. A physical model of a solid niobium and tantalum capacitor is based upon the metal-insulator–semiconductor (MIS) structure. For the normal mode and low electric field the current transport is described by the Poole-Frenkel mechanism and the current noise spectral density is given by the superposition of shot and g-r noise. For the high electric field the current transport is described by tunnelling and the current noise spectral density is 1/f type. Quantum transition diagram describing these mechanisms is shown. The leakage current temperature dependence for the low electric field gives the deep level activation energy Ea = 0.4 eV.

Anglický abstrakt

The NbO and Ta capacitor active region quality assessment is based on the evaluation of VA and noise characteristics and theirs temperature dependences. A physical model of a solid niobium and tantalum capacitor is based upon the metal-insulator–semiconductor (MIS) structure. For the normal mode and low electric field the current transport is described by the Poole-Frenkel mechanism and the current noise spectral density is given by the superposition of shot and g-r noise. For the high electric field the current transport is described by tunnelling and the current noise spectral density is 1/f type. Quantum transition diagram describing these mechanisms is shown. The leakage current temperature dependence for the low electric field gives the deep level activation energy Ea = 0.4 eV.

Klíčová slova v angličtině

Charge Carrier Transport, Noise, Niobium Oxide, Tantalum Capacitors

Autoři

ŠIKULA, J.; SEDLÁKOVÁ, V.; SITA, Z.

Vydáno

01.01.2006

Nakladatel

Ing. Zdeněk Novotný CSc.

Místo

Brno, ČR

ISBN

80-214-3246-2

Kniha

EDS '06 IMAPS CS International Conference Proceedings

Strany od

154

Strany počet

10

BibTex

@inproceedings{BUT24160,
  author="Josef {Šikula} and Vlasta {Sedláková} and Zdeněk {Sita}",
  title="Charge Carriers Transport and Noise in Niobium Oxide and Tantalum Capacitors",
  booktitle="EDS '06 IMAPS CS International Conference Proceedings",
  year="2006",
  pages="10",
  publisher="Ing. Zdeněk Novotný CSc.",
  address="Brno, ČR",
  isbn="80-214-3246-2"
}