Detail publikačního výsledku

Organic field effect transistor (OFET) based on nanofibrous PVDF-MOF gate insulator

HOLEČKOVÁ, J.; PISARENKO, T.; ZMEŠKAL, O.; POSPÍŠIL, J.; PAPEŽ, N.; SOBOLA, D.

Originální název

Organic field effect transistor (OFET) based on nanofibrous PVDF-MOF gate insulator

Anglický název

Organic field effect transistor (OFET) based on nanofibrous PVDF-MOF gate insulator

Druh

Článek recenzovaný mimo WoS a Scopus

Originální abstrakt

This paper deals with the comparison of measured results of two types of organic thin film transistors, namely organic electrochemical transistor (OECT) and organic field-effect transistor (OFET), where the same ionic liquid (EMIM-TFSI) was used in both cases. All the current-voltage characteristics (input, output, transfer current and transfer voltage) were measured and discussed.

Anglický abstrakt

This paper deals with the comparison of measured results of two types of organic thin film transistors, namely organic electrochemical transistor (OECT) and organic field-effect transistor (OFET), where the same ionic liquid (EMIM-TFSI) was used in both cases. All the current-voltage characteristics (input, output, transfer current and transfer voltage) were measured and discussed.

Klíčová slova

MOF, OFET, OECT, EMIM-TFSI, current-voltage characteristics

Klíčová slova v angličtině

MOF, OFET, OECT, EMIM-TFSI, current-voltage characteristics

Autoři

HOLEČKOVÁ, J.; PISARENKO, T.; ZMEŠKAL, O.; POSPÍŠIL, J.; PAPEŽ, N.; SOBOLA, D.

Vydáno

04.09.2025

ISSN

0094-243X

Periodikum

AIP conference proceedings

Svazek

3355

Číslo

020005

Stát

Spojené státy americké

Strany od

020005-1

Strany do

020005-10

Strany počet

10

URL

https://pubs.aip.org/aip/acp/article/3355/1/020005/3361620/Organic-field-effect-transistor-OFET-based-on

Dokumenty

2025_Holečková AIP (Thermophysics 2024) 020005_1_5.0290509-1