Detail publikačního výsledku

High-Temperature Ultrasensitive FET-Based CVD Graphene Hall Probes

SUPALOVÁ, L.; BARTOŠÍK, M.; ŠVARC, V.; MACH, J.; PIASTEK, J.; ŠPAČEK, O.; KONEČNÝ, M.; ŠIKOLA, T.

Originální název

High-Temperature Ultrasensitive FET-Based CVD Graphene Hall Probes

Anglický název

High-Temperature Ultrasensitive FET-Based CVD Graphene Hall Probes

Druh

Článek WoS

Originální abstrakt

Hall probes play a critical role in industrial applications such as electrical compasses, current sensors, and motion detectors; however, their performance often deteriorates at high temperatures. This study presents a magnetic-field probe with an ultrahigh sensitivity of 880 Omega/T at 150 degrees C, achieved using a graphene Hall bar integrated into a field-effect transistor (FET) architecture. To attain this exceptional sensitivity at elevated temperatures, careful control of doping, passivation, and manufacturing defects is essential. The doping level is optimized by adjusting the gate voltage to maintain the carrier concentration near the charge neutrality point (CNP). Further improvements in sensor response at high temperatures, as well as nearly a 2-fold increase in sensitivity at room temperature, are realized through polymer passivation of graphene. In contrast, it is demonstrated that patterning graphene into a narrower channel can increase the number of defects, which reduces the Hall probe's sensitivity. These findings demonstrate the potential of CVD graphene as a durable and high-performance material for Hall probes in challenging environments.

Anglický abstrakt

Hall probes play a critical role in industrial applications such as electrical compasses, current sensors, and motion detectors; however, their performance often deteriorates at high temperatures. This study presents a magnetic-field probe with an ultrahigh sensitivity of 880 Omega/T at 150 degrees C, achieved using a graphene Hall bar integrated into a field-effect transistor (FET) architecture. To attain this exceptional sensitivity at elevated temperatures, careful control of doping, passivation, and manufacturing defects is essential. The doping level is optimized by adjusting the gate voltage to maintain the carrier concentration near the charge neutrality point (CNP). Further improvements in sensor response at high temperatures, as well as nearly a 2-fold increase in sensitivity at room temperature, are realized through polymer passivation of graphene. In contrast, it is demonstrated that patterning graphene into a narrower channel can increase the number of defects, which reduces the Hall probe's sensitivity. These findings demonstrate the potential of CVD graphene as a durable and high-performance material for Hall probes in challenging environments.

Klíčová slova

graphene; Hall probe; field-effect transistor; sensitivity; high temperature

Klíčová slova v angličtině

graphene; Hall probe; field-effect transistor; sensitivity; high temperature

Autoři

SUPALOVÁ, L.; BARTOŠÍK, M.; ŠVARC, V.; MACH, J.; PIASTEK, J.; ŠPAČEK, O.; KONEČNÝ, M.; ŠIKOLA, T.

Vydáno

18.06.2025

Nakladatel

AMER CHEMICAL SOC

Místo

WASHINGTON

ISSN

2637-6113

Periodikum

ACS Applied Electronic Materials

Svazek

7

Číslo

13

Stát

Spojené státy americké

Strany od

5889

Strany do

5897

Strany počet

9

URL

https://pubs.acs.org/doi/10.1021/acsaelm.5c00351

Plný text v Digitální knihovně

http://hdl.handle.net/

BibTex

@article{BUT198511,
  author="Linda {Supalová} and Miroslav {Bartošík} and Vojtěch {Švarc} and Jindřich {Mach} and Jakub {Piastek} and Ondřej {Špaček} and Martin {Konečný} and Tomáš {Šikola}",
  title="High-Temperature Ultrasensitive FET-Based CVD Graphene Hall Probes",
  journal="ACS Applied Electronic Materials",
  year="2025",
  volume="7",
  number="13",
  pages="5889--5897",
  doi="10.1021/acsaelm.5c00351",
  issn="2637-6113",
  url="https://pubs.acs.org/doi/10.1021/acsaelm.5c00351"
}