Detail publikačního výsledku

High-Conductivity Stoichiometric Titanium Nitride for Bioelectronics

GABLECH, I.; MIGLIACCIO, L.; BRODSKÝ, J.; HAVLÍČEK, M.; PODEŠVA, P.; HRDÝ, R.; EHLICH, J.; GRYSZEL, M.; GLOWACKI, E.

Originální název

High-Conductivity Stoichiometric Titanium Nitride for Bioelectronics

Anglický název

High-Conductivity Stoichiometric Titanium Nitride for Bioelectronics

Druh

Článek WoS

Originální abstrakt

Bioelectronic devices such as neural stimulation and recording devices require stable low-impedance electrode interfaces. Various forms of nitridated titanium are used in biointerface applications due to robustness and biological inertness. In this work, stoichiometric TiN thin films are fabricated using a dual Kaufman ion-beam source setup, without the necessity of substrate heating. These layers are remarkable compared to established forms of TiN due to high degree of crystallinity and excellent electrical conductivity. How this fabrication method can be extended to produce structured AlN, to yield robust AlN/TiN bilayer micropyramids, is described. These electrodes compare favorably to commercial TiN microelectrodes in the performance metrics important for bioelectronics interfaces: higher conductivity (by an order of magnitude), lower electrochemical impedance, and higher capacitive charge injection with lower faradaicity. These results demonstrate that the Kaufman ion-beam sputtering method can produce competitive nitride ceramics for bioelectronics applications at low deposition temperatures.

Anglický abstrakt

Bioelectronic devices such as neural stimulation and recording devices require stable low-impedance electrode interfaces. Various forms of nitridated titanium are used in biointerface applications due to robustness and biological inertness. In this work, stoichiometric TiN thin films are fabricated using a dual Kaufman ion-beam source setup, without the necessity of substrate heating. These layers are remarkable compared to established forms of TiN due to high degree of crystallinity and excellent electrical conductivity. How this fabrication method can be extended to produce structured AlN, to yield robust AlN/TiN bilayer micropyramids, is described. These electrodes compare favorably to commercial TiN microelectrodes in the performance metrics important for bioelectronics interfaces: higher conductivity (by an order of magnitude), lower electrochemical impedance, and higher capacitive charge injection with lower faradaicity. These results demonstrate that the Kaufman ion-beam sputtering method can produce competitive nitride ceramics for bioelectronics applications at low deposition temperatures.

Klíčová slova

bioelectronics, ion-beam sputtering, multielectrode arrays, titanium nitride

Klíčová slova v angličtině

bioelectronics, ion-beam sputtering, multielectrode arrays, titanium nitride

Autoři

GABLECH, I.; MIGLIACCIO, L.; BRODSKÝ, J.; HAVLÍČEK, M.; PODEŠVA, P.; HRDÝ, R.; EHLICH, J.; GRYSZEL, M.; GLOWACKI, E.

Rok RIV

2024

Vydáno

02.02.2023

Nakladatel

Wiley-VCH GmbH

Místo

Německo

ISSN

2199-160X

Periodikum

Advanced Electronic Materials

Svazek

9

Číslo

4

Stát

Spolková republika Německo

Strany od

1

Strany do

11

Strany počet

11

URL

https://onlinelibrary.wiley.com/doi/full/10.1002/aelm.202200980

Plný text v Digitální knihovně

http://hdl.handle.net/11012/213717

BibTex

@article{BUT182433,
  author="Imrich {Gablech} and Ludovico {Migliaccio} and Jan {Brodský} and Marek {Havlíček} and Pavel {Podešva} and Radim {Hrdý} and Jiří {Ehlich} and Maciej {Gryszel} and Eric Daniel {Glowacki}",
  title="High-Conductivity Stoichiometric Titanium Nitride for Bioelectronics",
  journal="Advanced Electronic Materials",
  year="2023",
  volume="9",
  number="4",
  pages="1--11",
  doi="10.1002/aelm.202200980",
  issn="2199-160X",
  url="https://onlinelibrary.wiley.com/doi/full/10.1002/aelm.202200980"
}

Dokumenty

2023-Gablech