Detail publikačního výsledku

Electrical Transport Properties of Layered Black Phosphorus grown by Chemical Vapor Transport

Zdeg, I.; Al-Shami, A.; Tiouichi, G.; Absike, H.; Chaudhary, V.; Neugebauer, P.; Nouneh, K.; Belhboub, A.; Mounkachi, O.; El Fatimy, A.

Originální název

Electrical Transport Properties of Layered Black Phosphorus grown by Chemical Vapor Transport

Anglický název

Electrical Transport Properties of Layered Black Phosphorus grown by Chemical Vapor Transport

Druh

Článek WoS

Originální abstrakt

This work investigates the transport properties of layered black phosphorus (BP) grown by the chemical vapor transport (CVT). The electrical measurements are carried out at a temperature ranging from 300 to 2 K and a magnetic field up to 16 Tesla. The CVT-grown BP exhibits p-type conduction with an acceptor's 14-1.2 meV activation energy. The concentration of ionized acceptors is 1.2x1017cm-3$1.2 \times {10<^>{17}}{\rm{c}}{{\rm{m}}<^>{ - 3}}$ Moreover, the Hall mobility is found to be 138 cm(2)V(-1)s(-1) and 4 x 10(4) cm(2)V(-1)s(-1), respectively, at room temperature and 2 K. This work reveals the potential of CVT synthesis as a simple, nontoxic, and cheap technique to make high-quality BP crystals with high carrier mobility ready as a solid foundation for BP single-crystal application.

Anglický abstrakt

This work investigates the transport properties of layered black phosphorus (BP) grown by the chemical vapor transport (CVT). The electrical measurements are carried out at a temperature ranging from 300 to 2 K and a magnetic field up to 16 Tesla. The CVT-grown BP exhibits p-type conduction with an acceptor's 14-1.2 meV activation energy. The concentration of ionized acceptors is 1.2x1017cm-3$1.2 \times {10<^>{17}}{\rm{c}}{{\rm{m}}<^>{ - 3}}$ Moreover, the Hall mobility is found to be 138 cm(2)V(-1)s(-1) and 4 x 10(4) cm(2)V(-1)s(-1), respectively, at room temperature and 2 K. This work reveals the potential of CVT synthesis as a simple, nontoxic, and cheap technique to make high-quality BP crystals with high carrier mobility ready as a solid foundation for BP single-crystal application.

Klíčová slova

black phosphorus; chemical vapor transport; defects; mobility

Klíčová slova v angličtině

black phosphorus; chemical vapor transport; defects; mobility

Autoři

Zdeg, I.; Al-Shami, A.; Tiouichi, G.; Absike, H.; Chaudhary, V.; Neugebauer, P.; Nouneh, K.; Belhboub, A.; Mounkachi, O.; El Fatimy, A.

Rok RIV

2024

Vydáno

01.01.2023

Nakladatel

WILEY-V C H VERLAG GMBH

Místo

WEINHEIM

ISSN

1521-4079

Periodikum

CRYSTAL RESEARCH AND TECHNOLOGY

Svazek

58

Číslo

1

Stát

Spolková republika Německo

Strany počet

6

URL

https://onlinelibrary.wiley.com/doi/10.1002/crat.202200164

BibTex

@article{BUT182368,
  author="Zdeg, I. and Al-Shami, A. and Tiouichi, G. and Absike, H. and Chaudhary, V. and Neugebauer, P. and Nouneh, K. and Belhboub, A. and Mounkachi, O. and El Fatimy, A.",
  title="Electrical Transport Properties of Layered Black Phosphorus grown by Chemical Vapor Transport",
  journal="CRYSTAL RESEARCH AND TECHNOLOGY",
  year="2023",
  volume="58",
  number="1",
  pages="6",
  doi="10.1002/crat.202200164",
  issn="0232-1300",
  url="https://onlinelibrary.wiley.com/doi/10.1002/crat.202200164"
}