Detail publikačního výsledku

A Simple Calorimetric Measurement of SiC MOSFET Switching Loss and Comparison with Electric Measurement

MIKLÁŠ, J.; PROCHÁZKA, P.

Originální název

A Simple Calorimetric Measurement of SiC MOSFET Switching Loss and Comparison with Electric Measurement

Anglický název

A Simple Calorimetric Measurement of SiC MOSFET Switching Loss and Comparison with Electric Measurement

Druh

Stať ve sborníku v databázi WoS či Scopus

Originální abstrakt

This paper proposes a simple and accessible method for dynamic calorimetric measurement of ultra-fast power semiconductor devices switching loss. It utilizes a temperature rise monitoring of a copper cube thermally coupled with a semiconductor chip. No special chambers or heat exchangers are used and no additional wiring compared to standard electric pulsed test. This provides an opportunity to perform a direct comparison with traditional electric power loss measurement, including all of the parasitic influences and further investigation of power loss with intentional varying of particular elements impact, which absent in available literature. The paper establishes the test method and setup as well a basic comparison of calorimetric and electric measurement.

Anglický abstrakt

This paper proposes a simple and accessible method for dynamic calorimetric measurement of ultra-fast power semiconductor devices switching loss. It utilizes a temperature rise monitoring of a copper cube thermally coupled with a semiconductor chip. No special chambers or heat exchangers are used and no additional wiring compared to standard electric pulsed test. This provides an opportunity to perform a direct comparison with traditional electric power loss measurement, including all of the parasitic influences and further investigation of power loss with intentional varying of particular elements impact, which absent in available literature. The paper establishes the test method and setup as well a basic comparison of calorimetric and electric measurement.

Klíčová slova

Power Semiconductor SiC MOSFET Switching Loss, Parasitic Waveform Distortion, Calorimetric Power Loss Measurement, Electrical Measurement, Double Pulse Test, Measurement Methods Comparison

Klíčová slova v angličtině

Power Semiconductor SiC MOSFET Switching Loss, Parasitic Waveform Distortion, Calorimetric Power Loss Measurement, Electrical Measurement, Double Pulse Test, Measurement Methods Comparison

Autoři

MIKLÁŠ, J.; PROCHÁZKA, P.

Rok RIV

2023

Vydáno

26.04.2022

Nakladatel

Brno University of Technology, Faculty of Electrical Engineering and Technology

Místo

Brno

ISBN

978-80-214-6030-0

Kniha

PROCEEDINGS II OF THE 28TH STUDENT EEICT 2022 Selected Papers

Edice

1

Strany od

198

Strany do

203

Strany počet

6

URL

https://www.eeict.cz/eeict_download/archiv/sborniky/EEICT_2022_sbornik_2_v3.pdf

BibTex

@inproceedings{BUT180260,
  author="Ján {Mikláš} and Petr {Procházka}",
  title="A Simple Calorimetric Measurement of SiC MOSFET Switching Loss and Comparison with Electric Measurement",
  booktitle="PROCEEDINGS II OF THE 28TH STUDENT EEICT 2022 Selected Papers",
  year="2022",
  series="1",
  pages="198--203",
  publisher="Brno University of Technology, Faculty of Electrical Engineering and Technology",
  address="Brno",
  isbn="978-80-214-6030-0",
  url="https://www.eeict.cz/eeict_download/archiv/sborniky/EEICT_2022_sbornik_2_v3.pdf"
}